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Effect of oxygen content on p-type electrical conductivity in β-Ga2O3 films.

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Title: Effect of oxygen content on p-type electrical conductivity in β-Ga2O3 films.
Authors: Park, Se-Rim1,2 (AUTHOR), Chi, Zeyu1,2 (AUTHOR) zeyu.chi@uvsq.fr, Sartel, Corinne2 (AUTHOR), Koo, Sang-Mo1 (AUTHOR), Fregnaux, Mathieu3 (AUTHOR), Zheng, Yunlin4 (AUTHOR), Douglas, Sean5 (AUTHOR), Penman, Lewis5 (AUTHOR), Massabuau, Fabien5 (AUTHOR), Tchelidze, Tamar6 (AUTHOR), Chauveau, Jean-Michel1,2 (AUTHOR) jean-michel.chauveau@uvsq.fr, Chikoidze, Ekaterine1,2 (AUTHOR) ekaterine.chikoidze@uvsq.fr
Source: Materials Science in Semiconductor Processing. Dec2025, Vol. 200, pN.PAG-N.PAG. 1p.
Subjects: Atmospheric oxygen, Thin films, Gallium, Homoepitaxy, Crystallinity, Metal organic chemical vapor deposition, Hole mobility
Abstract: β-Ga 2 O 3 is a promising ultrawide bandgap semiconductor, but achieving reliable p- type conductivity remains a challenge, especially due to the scarcity of high-quality homoepitaxial p- type β -Ga 2 O 3 layers. In this study, we investigate β -Ga 2 O 3 thin films homoepitaxially grown on (2 ‾ 01) Fe doped β -Ga 2 O 3 substrates via metal organic chemical vapor deposition under different oxygen-to-gallium (O/Ga) ratios. We examine the effect of oxygen content on the structural, electrical, and optical properties of thin films. The layer grown under oxygen-rich conditions (O/Ga = 6400) exhibited an enhanced crystallinity of the dominant (2 ‾ 01) orientation as indicated by a low full-width at half maximum (FWHM) of 72 arcsec in the X-ray diffraction rocking curve, a suppressed oxygen vacancy signal in X-ray photoelectron spectroscopy, and a two order of magnitude increase in hole concentration (p = 4.5 × 1015 cm−3 vs. 4.6 × 1013 cm−3 at 570 K), associated with a shallow acceptor level with an activation energy of 0.21 eV, likely due to V G a − - V O + + complex-like defect. In addition, both films exhibit hole mobility μ H > 30 cm2/V·s over the measurement temperature range. These findings suggest that oxygen-rich growth conditions enhance both the crystallinity and native hole conductivity of β -Ga 2 O 3 , offering a promising route toward achieving controlled p- type behavior in this material. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
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Abstract:β-Ga 2 O 3 is a promising ultrawide bandgap semiconductor, but achieving reliable p- type conductivity remains a challenge, especially due to the scarcity of high-quality homoepitaxial p- type β -Ga 2 O 3 layers. In this study, we investigate β -Ga 2 O 3 thin films homoepitaxially grown on (2 ‾ 01) Fe doped β -Ga 2 O 3 substrates via metal organic chemical vapor deposition under different oxygen-to-gallium (O/Ga) ratios. We examine the effect of oxygen content on the structural, electrical, and optical properties of thin films. The layer grown under oxygen-rich conditions (O/Ga = 6400) exhibited an enhanced crystallinity of the dominant (2 ‾ 01) orientation as indicated by a low full-width at half maximum (FWHM) of 72 arcsec in the X-ray diffraction rocking curve, a suppressed oxygen vacancy signal in X-ray photoelectron spectroscopy, and a two order of magnitude increase in hole concentration (p = 4.5 × 1015 cm−3 vs. 4.6 × 1013 cm−3 at 570 K), associated with a shallow acceptor level with an activation energy of 0.21 eV, likely due to V G a − - V O + + complex-like defect. In addition, both films exhibit hole mobility μ H > 30 cm2/V·s over the measurement temperature range. These findings suggest that oxygen-rich growth conditions enhance both the crystallinity and native hole conductivity of β -Ga 2 O 3 , offering a promising route toward achieving controlled p- type behavior in this material. [ABSTRACT FROM AUTHOR]
ISSN:13698001
DOI:10.1016/j.mssp.2025.110003