A 0.05–20 GHz ultra-wideband CMOS circulator with differential compensation transistors and differential delay lines.
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| Title: | A 0.05–20 GHz ultra-wideband CMOS circulator with differential compensation transistors and differential delay lines. |
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| Authors: | Li, Zhengyang1 (AUTHOR), Zhang, Youming1,2 (AUTHOR), Huang, Fengyi1,2 (AUTHOR) fyhuang@seu.edu.cn |
| Source: | AEU: International Journal of Electronics & Communications. Dec2025, Vol. 202, pN.PAG-N.PAG. 1p. |
| Subjects: | Ultra-wideband devices, Circulators (Electrical engineering), Delay lines, Broadband communication systems, Transistors, Complementary metal oxide semiconductors |
| Abstract: | An ultra-wideband circulator with high TX-to-RX isolation based on an improved structure of sequentially switched delay lines (SSDL) is presented. Novel differential compensation transistors (DCTs) are introduced to cancel the TX signal leakage through the parasitic capacitors of the main switches. To optimize the TX-to-RX isolation over a large bandwidth, a differential delay line (DDL) based on delay compensation technique is proposed to achieve a large delay-bandwidth product (DBW) and a low delay variation (DV). The circulator circuit is implemented in a 40-nm CMOS process with excellent TX-to-RX isolation and a bandwidth substantially larger than the previously reported results, while other performances are comparable to the prior arts. The circulator circuit achieves >24 dB TX-to-RX isolation over the frequency band of 0.05–20 GHz. The TX-to-ANT and ANT-to-RX losses are 4.2–8.3 dB and 4.2–8.7 dB. The circulator exhibits a high TX-induced ANT-RX compression of 10.1–16.8 dBm across the frequency band. The measured input power 1-dB compression points (IP1dB) for TX-to-ANT and ANT-to-RX are 2.1–8.3 dBm and 2.4–7.3 dBm, respectively, with the corresponding input third-order intercept points (IIP3) of 15.6–22.1 dBm and 15.4–22.4 dBm. [ABSTRACT FROM AUTHOR] |
| Copyright of AEU: International Journal of Electronics & Communications is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 188596816 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: A 0.05–20 GHz ultra-wideband CMOS circulator with differential compensation transistors and differential delay lines. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Li%2C+Zhengyang%22">Li, Zhengyang</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhang%2C+Youming%22">Zhang, Youming</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Huang%2C+Fengyi%22">Huang, Fengyi</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> fyhuang@seu.edu.cn</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22AEU%3A+International+Journal+of+Electronics+%26+Communications%22">AEU: International Journal of Electronics & Communications</searchLink>. Dec2025, Vol. 202, pN.PAG-N.PAG. 1p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Ultra-wideband+devices%22">Ultra-wideband devices</searchLink><br /><searchLink fieldCode="DE" term="%22Circulators+%28Electrical+engineering%29%22">Circulators (Electrical engineering)</searchLink><br /><searchLink fieldCode="DE" term="%22Delay+lines%22">Delay lines</searchLink><br /><searchLink fieldCode="DE" term="%22Broadband+communication+systems%22">Broadband communication systems</searchLink><br /><searchLink fieldCode="DE" term="%22Transistors%22">Transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Complementary+metal+oxide+semiconductors%22">Complementary metal oxide semiconductors</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: An ultra-wideband circulator with high TX-to-RX isolation based on an improved structure of sequentially switched delay lines (SSDL) is presented. Novel differential compensation transistors (DCTs) are introduced to cancel the TX signal leakage through the parasitic capacitors of the main switches. To optimize the TX-to-RX isolation over a large bandwidth, a differential delay line (DDL) based on delay compensation technique is proposed to achieve a large delay-bandwidth product (DBW) and a low delay variation (DV). The circulator circuit is implemented in a 40-nm CMOS process with excellent TX-to-RX isolation and a bandwidth substantially larger than the previously reported results, while other performances are comparable to the prior arts. The circulator circuit achieves >24 dB TX-to-RX isolation over the frequency band of 0.05–20 GHz. The TX-to-ANT and ANT-to-RX losses are 4.2–8.3 dB and 4.2–8.7 dB. The circulator exhibits a high TX-induced ANT-RX compression of 10.1–16.8 dBm across the frequency band. The measured input power 1-dB compression points (IP1dB) for TX-to-ANT and ANT-to-RX are 2.1–8.3 dBm and 2.4–7.3 dBm, respectively, with the corresponding input third-order intercept points (IIP3) of 15.6–22.1 dBm and 15.4–22.4 dBm. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of AEU: International Journal of Electronics & Communications is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1016/j.aeue.2025.156015 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 1 StartPage: N.PAG Subjects: – SubjectFull: Ultra-wideband devices Type: general – SubjectFull: Circulators (Electrical engineering) Type: general – SubjectFull: Delay lines Type: general – SubjectFull: Broadband communication systems Type: general – SubjectFull: Transistors Type: general – SubjectFull: Complementary metal oxide semiconductors Type: general Titles: – TitleFull: A 0.05–20 GHz ultra-wideband CMOS circulator with differential compensation transistors and differential delay lines. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Li, Zhengyang – PersonEntity: Name: NameFull: Zhang, Youming – PersonEntity: Name: NameFull: Huang, Fengyi IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 12 Text: Dec2025 Type: published Y: 2025 Identifiers: – Type: issn-print Value: 14348411 Numbering: – Type: volume Value: 202 Titles: – TitleFull: AEU: International Journal of Electronics & Communications Type: main |
| ResultId | 1 |