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MPCVD diamond thin films as heat spreaders for back end of the line (BEOL) silicon chip fabrication.

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Bibliographic Details
Title: MPCVD diamond thin films as heat spreaders for back end of the line (BEOL) silicon chip fabrication.
Authors: Tzeng, Yonhua1 (AUTHOR) tzengyo@mail.ncku.edu.tw, Lin, Fu-Cheng1 (AUTHOR), Guu, Stephen Yang-En1 (AUTHOR), Chien, Yu-Sen1 (AUTHOR), Jhang, Alen1 (AUTHOR), Tsai, Jian-Wei1 (AUTHOR), Chang, Hsiaokang2 (AUTHOR), Huang, Hsin-Yen2 (AUTHOR), Lee, Shao-Kuan2 (AUTHOR), Lee, Cheng-Chin2 (AUTHOR), Yang, Kuang-Wei2 (AUTHOR), Hsieh, Wen-Pin3 (AUTHOR)
Source: Diamond & Related Materials. Dec2025, Vol. 160, pN.PAG-N.PAG. 1p.
Subjects: Diamond thin films, Thermal conductivity, Semiconductor manufacturing, Graphite, Thermal interface materials, Semiconductor industry, Integrated circuits manufacturing
Abstract: High heat dissipation is a severe challenge in modern semiconductor industry. With excellent thermal conductivity and dielectric strength, diamonds find them desirable for the thermal management needs. For back-end-of-line (BEOL) fabrication of integrated circuits, diamond deposition temperature is kept below 450 °C to prevent the existing circuits and structures from being damaged. A novel and facile technique is demonstrated to deposit diamond films at low temperature while retaining thermal conductivity measured by the time-domain thermo-reflectance (TDTR) method higher than 300 W/m·K. Uniform 3 nm sized diamond crystals were used as seeds for MPCVD diamond growth in a CH 4 -CO 2 -H 2 gas mixture. A controlled amount of graphite paste was added at the beginning to promote the crystal growth of the diamond seeds and protect diamond seeds from being etched by the plasma. Thermal conductivity of diamond films increases with the size of diamond grain as estimated by SEM. Initial addition of graphite paste contributes to rapid growth of diamond seed crystals to form 50–100 nm thin smooth and continuous diamond films. After prolonged growth, the thermal conductivity of 200–300 nm diamond films increases with the average diamond grain size and depends less on the amount of initial graphite paste additive. The low-temperature diamond thin films with good thermal conductivity are promising for future semiconductor industry. [Display omitted] [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
Description
Abstract:High heat dissipation is a severe challenge in modern semiconductor industry. With excellent thermal conductivity and dielectric strength, diamonds find them desirable for the thermal management needs. For back-end-of-line (BEOL) fabrication of integrated circuits, diamond deposition temperature is kept below 450 °C to prevent the existing circuits and structures from being damaged. A novel and facile technique is demonstrated to deposit diamond films at low temperature while retaining thermal conductivity measured by the time-domain thermo-reflectance (TDTR) method higher than 300 W/m·K. Uniform 3 nm sized diamond crystals were used as seeds for MPCVD diamond growth in a CH 4 -CO 2 -H 2 gas mixture. A controlled amount of graphite paste was added at the beginning to promote the crystal growth of the diamond seeds and protect diamond seeds from being etched by the plasma. Thermal conductivity of diamond films increases with the size of diamond grain as estimated by SEM. Initial addition of graphite paste contributes to rapid growth of diamond seed crystals to form 50–100 nm thin smooth and continuous diamond films. After prolonged growth, the thermal conductivity of 200–300 nm diamond films increases with the average diamond grain size and depends less on the amount of initial graphite paste additive. The low-temperature diamond thin films with good thermal conductivity are promising for future semiconductor industry. [Display omitted] [ABSTRACT FROM AUTHOR]
ISSN:09259635
DOI:10.1016/j.diamond.2025.112999