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MPCVD diamond thin films as heat spreaders for back end of the line (BEOL) silicon chip fabrication.

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Title: MPCVD diamond thin films as heat spreaders for back end of the line (BEOL) silicon chip fabrication.
Authors: Tzeng, Yonhua1 (AUTHOR) tzengyo@mail.ncku.edu.tw, Lin, Fu-Cheng1 (AUTHOR), Guu, Stephen Yang-En1 (AUTHOR), Chien, Yu-Sen1 (AUTHOR), Jhang, Alen1 (AUTHOR), Tsai, Jian-Wei1 (AUTHOR), Chang, Hsiaokang2 (AUTHOR), Huang, Hsin-Yen2 (AUTHOR), Lee, Shao-Kuan2 (AUTHOR), Lee, Cheng-Chin2 (AUTHOR), Yang, Kuang-Wei2 (AUTHOR), Hsieh, Wen-Pin3 (AUTHOR)
Source: Diamond & Related Materials. Dec2025, Vol. 160, pN.PAG-N.PAG. 1p.
Subjects: Diamond thin films, Thermal conductivity, Semiconductor manufacturing, Graphite, Thermal interface materials, Semiconductor industry, Integrated circuits manufacturing
Abstract: High heat dissipation is a severe challenge in modern semiconductor industry. With excellent thermal conductivity and dielectric strength, diamonds find them desirable for the thermal management needs. For back-end-of-line (BEOL) fabrication of integrated circuits, diamond deposition temperature is kept below 450 °C to prevent the existing circuits and structures from being damaged. A novel and facile technique is demonstrated to deposit diamond films at low temperature while retaining thermal conductivity measured by the time-domain thermo-reflectance (TDTR) method higher than 300 W/m·K. Uniform 3 nm sized diamond crystals were used as seeds for MPCVD diamond growth in a CH 4 -CO 2 -H 2 gas mixture. A controlled amount of graphite paste was added at the beginning to promote the crystal growth of the diamond seeds and protect diamond seeds from being etched by the plasma. Thermal conductivity of diamond films increases with the size of diamond grain as estimated by SEM. Initial addition of graphite paste contributes to rapid growth of diamond seed crystals to form 50–100 nm thin smooth and continuous diamond films. After prolonged growth, the thermal conductivity of 200–300 nm diamond films increases with the average diamond grain size and depends less on the amount of initial graphite paste additive. The low-temperature diamond thin films with good thermal conductivity are promising for future semiconductor industry. [Display omitted] [ABSTRACT FROM AUTHOR]
Copyright of Diamond & Related Materials is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 189643976
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Label: Title
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  Data: MPCVD diamond thin films as heat spreaders for back end of the line (BEOL) silicon chip fabrication.
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  Data: <searchLink fieldCode="AR" term="%22Tzeng%2C+Yonhua%22">Tzeng, Yonhua</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> tzengyo@mail.ncku.edu.tw</i><br /><searchLink fieldCode="AR" term="%22Lin%2C+Fu-Cheng%22">Lin, Fu-Cheng</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Guu%2C+Stephen+Yang-En%22">Guu, Stephen Yang-En</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chien%2C+Yu-Sen%22">Chien, Yu-Sen</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Jhang%2C+Alen%22">Jhang, Alen</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Tsai%2C+Jian-Wei%22">Tsai, Jian-Wei</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chang%2C+Hsiaokang%22">Chang, Hsiaokang</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Huang%2C+Hsin-Yen%22">Huang, Hsin-Yen</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Lee%2C+Shao-Kuan%22">Lee, Shao-Kuan</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Lee%2C+Cheng-Chin%22">Lee, Cheng-Chin</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Yang%2C+Kuang-Wei%22">Yang, Kuang-Wei</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Hsieh%2C+Wen-Pin%22">Hsieh, Wen-Pin</searchLink><relatesTo>3</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Diamond+%26+Related+Materials%22">Diamond & Related Materials</searchLink>. Dec2025, Vol. 160, pN.PAG-N.PAG. 1p.
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  Data: <searchLink fieldCode="DE" term="%22Diamond+thin+films%22">Diamond thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Thermal+conductivity%22">Thermal conductivity</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+manufacturing%22">Semiconductor manufacturing</searchLink><br /><searchLink fieldCode="DE" term="%22Graphite%22">Graphite</searchLink><br /><searchLink fieldCode="DE" term="%22Thermal+interface+materials%22">Thermal interface materials</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+industry%22">Semiconductor industry</searchLink><br /><searchLink fieldCode="DE" term="%22Integrated+circuits+manufacturing%22">Integrated circuits manufacturing</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: High heat dissipation is a severe challenge in modern semiconductor industry. With excellent thermal conductivity and dielectric strength, diamonds find them desirable for the thermal management needs. For back-end-of-line (BEOL) fabrication of integrated circuits, diamond deposition temperature is kept below 450 °C to prevent the existing circuits and structures from being damaged. A novel and facile technique is demonstrated to deposit diamond films at low temperature while retaining thermal conductivity measured by the time-domain thermo-reflectance (TDTR) method higher than 300 W/m·K. Uniform 3 nm sized diamond crystals were used as seeds for MPCVD diamond growth in a CH 4 -CO 2 -H 2 gas mixture. A controlled amount of graphite paste was added at the beginning to promote the crystal growth of the diamond seeds and protect diamond seeds from being etched by the plasma. Thermal conductivity of diamond films increases with the size of diamond grain as estimated by SEM. Initial addition of graphite paste contributes to rapid growth of diamond seed crystals to form 50–100 nm thin smooth and continuous diamond films. After prolonged growth, the thermal conductivity of 200–300 nm diamond films increases with the average diamond grain size and depends less on the amount of initial graphite paste additive. The low-temperature diamond thin films with good thermal conductivity are promising for future semiconductor industry. [Display omitted] [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Diamond & Related Materials is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1016/j.diamond.2025.112999
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      – Code: eng
        Text: English
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      Pagination:
        PageCount: 1
        StartPage: N.PAG
    Subjects:
      – SubjectFull: Diamond thin films
        Type: general
      – SubjectFull: Thermal conductivity
        Type: general
      – SubjectFull: Semiconductor manufacturing
        Type: general
      – SubjectFull: Graphite
        Type: general
      – SubjectFull: Thermal interface materials
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      – SubjectFull: Semiconductor industry
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      – SubjectFull: Integrated circuits manufacturing
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      – TitleFull: MPCVD diamond thin films as heat spreaders for back end of the line (BEOL) silicon chip fabrication.
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            – D: 01
              M: 12
              Text: Dec2025
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              Y: 2025
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