APA (7th ed.) Citation

Fan, C., Yu, X., Tsai, Y., Chen, Y., Chen, H., & Shih, J. (2026). Enhanced performance of InZnSnO thin-film-transistors by designing a dual-channel-layer InSnO/InZnSnO with Xenon pulsed-light-annealing. Materials Science in Semiconductor Processing, 203, N.PAG. https://doi.org/10.1016/j.mssp.2025.110195

Chicago Style (17th ed.) Citation

Fan, Ching-Lin, Xiang-Wei Yu, Yung-Sheng Tsai, Yan-Quan Chen, Hung-Yi Chen, and Jiun-Hann Shih. "Enhanced Performance of InZnSnO Thin-film-transistors by Designing a Dual-channel-layer InSnO/InZnSnO with Xenon Pulsed-light-annealing." Materials Science in Semiconductor Processing 203 (2026): N.PAG. https://doi.org/10.1016/j.mssp.2025.110195.

MLA (9th ed.) Citation

Fan, Ching-Lin, et al. "Enhanced Performance of InZnSnO Thin-film-transistors by Designing a Dual-channel-layer InSnO/InZnSnO with Xenon Pulsed-light-annealing." Materials Science in Semiconductor Processing, vol. 203, 2026, p. N.PAG, https://doi.org/10.1016/j.mssp.2025.110195.