Flexible Inorganic/Organic Memristor Based on W-Doped MoO x /Poly(methyl methacrylate) Heterostructure.
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| Title: | Flexible Inorganic/Organic Memristor Based on W-Doped MoO x /Poly(methyl methacrylate) Heterostructure. |
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| Authors: | Kalemai, Gion1 (AUTHOR), Aidinis, Konstantinos2,3 (AUTHOR), Sakellis, Elias3,4,5 (AUTHOR), Filippatos, Petros-Panagis4 (AUTHOR), Tsipas, Polychronis4,5 (AUTHOR), Davazoglou, Dimitris1,4 (AUTHOR), Soultati, Anastasia2,4 (AUTHOR) a.soultati@inn.demokritos.gr |
| Source: | Nanomaterials (2079-4991). Nov2025, Vol. 15 Issue 22, p1707. 15p. |
| Subjects: | Memristors, Nonvolatile memory, Heterostructures, Nonvolatile random-access memory, Molybdenum oxides, Charge carrier capture, Polymethylmethacrylate |
| Abstract: | Work investigates the doping of molybdenum oxide (MoOx) with tungsten (W). The successful incorporation of W into the MoOx lattice was confirmed through X-ray photoelectron spectroscopy (XPS) and energy-dispersive X-ray spectroscopy (EDS). Structural and optical analysis revealed the presence of oxygen vacancies within the W-MoOx film, which are known to facilitate resistive switching (RS) in memristive devices. Based on this, a flexible memristor with the structure PET/ITO/W-MoOx/polymethyl methacrylate (PMMA)/Al was fabricated. PMMA was strategically introduced between the W-MoOx layer and the aluminum electrode to modulate interfacial properties that influence RS behavior. The W-MoOx/PMMA-based memristor exhibited good resistive switching characteristics, with a memory window of approximately 12 and a retention time exceeding 2 × 104 s, demonstrating a non-volatile memory behavior. In the high-resistance state (HRS), the conduction mechanism under higher applied voltages follows a space-charge-limited current (SCLC) model, indicating that the RS process is primarily governed by charge trapping and de-trapping at the interface. Overall, the consistent and robust switching performance of the W-MoOx/PMMA heterostructure underlines its potential as a reliable functional layer for next-generation resistive random-access memory (ReRAM) devices. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | Work investigates the doping of molybdenum oxide (MoOx) with tungsten (W). The successful incorporation of W into the MoOx lattice was confirmed through X-ray photoelectron spectroscopy (XPS) and energy-dispersive X-ray spectroscopy (EDS). Structural and optical analysis revealed the presence of oxygen vacancies within the W-MoOx film, which are known to facilitate resistive switching (RS) in memristive devices. Based on this, a flexible memristor with the structure PET/ITO/W-MoOx/polymethyl methacrylate (PMMA)/Al was fabricated. PMMA was strategically introduced between the W-MoOx layer and the aluminum electrode to modulate interfacial properties that influence RS behavior. The W-MoOx/PMMA-based memristor exhibited good resistive switching characteristics, with a memory window of approximately 12 and a retention time exceeding 2 × 104 s, demonstrating a non-volatile memory behavior. In the high-resistance state (HRS), the conduction mechanism under higher applied voltages follows a space-charge-limited current (SCLC) model, indicating that the RS process is primarily governed by charge trapping and de-trapping at the interface. Overall, the consistent and robust switching performance of the W-MoOx/PMMA heterostructure underlines its potential as a reliable functional layer for next-generation resistive random-access memory (ReRAM) devices. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 20794991 |
| DOI: | 10.3390/nano15221707 |
