Hydrazine Intercalation into 2D MoTe 2 Field Effect Transistor as Charge Trapping Sites for Nonvolatile Memory Applications.
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| Title: | Hydrazine Intercalation into 2D MoTe 2 Field Effect Transistor as Charge Trapping Sites for Nonvolatile Memory Applications. |
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| Authors: | Yuan, Li1,2,3 (AUTHOR), Wu, Yongyu1,2,4 (AUTHOR), Ou, Haohui2,3 (AUTHOR), Wu, Di2,4,5 (AUTHOR), Ji, Yuhan5 (AUTHOR), Qi, Dianyu1,4 (AUTHOR), Zhang, Wenjing2 (AUTHOR) |
| Source: | Nanomaterials (2079-4991). Nov2025, Vol. 15 Issue 22, p1721. 14p. |
| Subjects: | Nonvolatile memory, Field-effect transistors, Molybdenum, Charge carrier capture, Hydrazines, Metadata |
| Abstract: | Driven by the demands of artificial intelligence, big data and the Internet of Things, non-volatile memory has become the cornerstone of modern computing. However, at present, most of the preparation processes are quite complex and have high requirements for the materials. Here, we discovered that hydrazine (N2H4) molecules can be efficiently intercalated into the MoTe2, acting as stable charge-trapping centers. This intercalation not only induces a controllable reversible polar conversion but also causes a huge hysteretic window (>60 V) lasting over one hour in air. Leveraging this giant hysteresis, we fabricated a simplified memory device. The device demonstrates a large erase/program current ratio of ~104 and excellent retention characteristics. Our work pioneers the use of interlayer molecular intercalation for electronic modulation in 2D semiconductors, offering a new paradigm for developing memory devices with fabrication processes. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | Driven by the demands of artificial intelligence, big data and the Internet of Things, non-volatile memory has become the cornerstone of modern computing. However, at present, most of the preparation processes are quite complex and have high requirements for the materials. Here, we discovered that hydrazine (N2H4) molecules can be efficiently intercalated into the MoTe2, acting as stable charge-trapping centers. This intercalation not only induces a controllable reversible polar conversion but also causes a huge hysteretic window (>60 V) lasting over one hour in air. Leveraging this giant hysteresis, we fabricated a simplified memory device. The device demonstrates a large erase/program current ratio of ~104 and excellent retention characteristics. Our work pioneers the use of interlayer molecular intercalation for electronic modulation in 2D semiconductors, offering a new paradigm for developing memory devices with fabrication processes. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 20794991 |
| DOI: | 10.3390/nano15221721 |
