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Hydrazine Intercalation into 2D MoTe 2 Field Effect Transistor as Charge Trapping Sites for Nonvolatile Memory Applications.

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Title: Hydrazine Intercalation into 2D MoTe 2 Field Effect Transistor as Charge Trapping Sites for Nonvolatile Memory Applications.
Authors: Yuan, Li1,2,3 (AUTHOR), Wu, Yongyu1,2,4 (AUTHOR), Ou, Haohui2,3 (AUTHOR), Wu, Di2,4,5 (AUTHOR), Ji, Yuhan5 (AUTHOR), Qi, Dianyu1,4 (AUTHOR), Zhang, Wenjing2 (AUTHOR)
Source: Nanomaterials (2079-4991). Nov2025, Vol. 15 Issue 22, p1721. 14p.
Subjects: Nonvolatile memory, Field-effect transistors, Molybdenum, Charge carrier capture, Hydrazines, Metadata
Abstract: Driven by the demands of artificial intelligence, big data and the Internet of Things, non-volatile memory has become the cornerstone of modern computing. However, at present, most of the preparation processes are quite complex and have high requirements for the materials. Here, we discovered that hydrazine (N2H4) molecules can be efficiently intercalated into the MoTe2, acting as stable charge-trapping centers. This intercalation not only induces a controllable reversible polar conversion but also causes a huge hysteretic window (>60 V) lasting over one hour in air. Leveraging this giant hysteresis, we fabricated a simplified memory device. The device demonstrates a large erase/program current ratio of ~104 and excellent retention characteristics. Our work pioneers the use of interlayer molecular intercalation for electronic modulation in 2D semiconductors, offering a new paradigm for developing memory devices with fabrication processes. [ABSTRACT FROM AUTHOR]
Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Label: Title
  Group: Ti
  Data: Hydrazine Intercalation into 2D MoTe 2 Field Effect Transistor as Charge Trapping Sites for Nonvolatile Memory Applications.
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  Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. Nov2025, Vol. 15 Issue 22, p1721. 14p.
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  Data: <searchLink fieldCode="DE" term="%22Nonvolatile+memory%22">Nonvolatile memory</searchLink><br /><searchLink fieldCode="DE" term="%22Field-effect+transistors%22">Field-effect transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Molybdenum%22">Molybdenum</searchLink><br /><searchLink fieldCode="DE" term="%22Charge+carrier+capture%22">Charge carrier capture</searchLink><br /><searchLink fieldCode="DE" term="%22Hydrazines%22">Hydrazines</searchLink><br /><searchLink fieldCode="DE" term="%22Metadata%22">Metadata</searchLink>
– Name: Abstract
  Label: Abstract
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  Data: Driven by the demands of artificial intelligence, big data and the Internet of Things, non-volatile memory has become the cornerstone of modern computing. However, at present, most of the preparation processes are quite complex and have high requirements for the materials. Here, we discovered that hydrazine (N2H4) molecules can be efficiently intercalated into the MoTe2, acting as stable charge-trapping centers. This intercalation not only induces a controllable reversible polar conversion but also causes a huge hysteretic window (>60 V) lasting over one hour in air. Leveraging this giant hysteresis, we fabricated a simplified memory device. The device demonstrates a large erase/program current ratio of ~104 and excellent retention characteristics. Our work pioneers the use of interlayer molecular intercalation for electronic modulation in 2D semiconductors, offering a new paradigm for developing memory devices with fabrication processes. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.3390/nano15221721
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      – Code: eng
        Text: English
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        PageCount: 14
        StartPage: 1721
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      – SubjectFull: Nonvolatile memory
        Type: general
      – SubjectFull: Field-effect transistors
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      – SubjectFull: Molybdenum
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      – SubjectFull: Charge carrier capture
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      – SubjectFull: Hydrazines
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      – TitleFull: Hydrazine Intercalation into 2D MoTe 2 Field Effect Transistor as Charge Trapping Sites for Nonvolatile Memory Applications.
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            NameFull: Yuan, Li
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            NameFull: Wu, Yongyu
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              Text: Nov2025
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