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Controlled Arrangement of Liquid Crystal Molecules on SiO2 Film Nanopatterns Using UV Nanoimprint Lithography.

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Title: Controlled Arrangement of Liquid Crystal Molecules on SiO2 Film Nanopatterns Using UV Nanoimprint Lithography.
Authors: Choi, Bo‐Kyeong1 (AUTHOR), Lee, Dong Wook2 (AUTHOR) dongwlee@jj.ac.kr, Seo, Dae‐Shik1 (AUTHOR) dsseo@yonsei.ac.kr
Source: Surface & Interface Analysis: SIA. Jan2026, Vol. 58 Issue 1, p9-17. 9p.
Subjects: Liquid crystals, Nanoimprint lithography, Atomic force microscopy, Silica nanoparticles, X-ray photoelectron spectroscopy, Electric properties, Polarization microscopy
Abstract: This study explores the fabrication of SiO2 nanopatterned thin films using UV nanoimprint lithography (UV‐NIL) to enhance electrical properties. Optimization of UV irradiation time was critical, with 7 min identified as the optimal duration, ensuring superior nanopattern replication, minimal defects, and improved residual charge characteristics. X‐ray photoelectron spectroscopy revealed an increase in O1s peak intensity with extended UV exposure, indicating that UV irradiation promotes C–O bond formation, thereby enhancing the material's catalytic activity and electronic properties. Atomic force microscopy provided 2D and 3D imaging, confirming high‐fidelity pattern replication, which was further supported by line profile analysis. Additionally, polarized optical microscopy demonstrated uniform liquid crystal alignment on the film, enabling precise light control. These results underscore the potential of SiO2 alignment films fabricated via UV‐NIL with a 7‐min UV exposure for future display technologies. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
Description
Abstract:This study explores the fabrication of SiO2 nanopatterned thin films using UV nanoimprint lithography (UV‐NIL) to enhance electrical properties. Optimization of UV irradiation time was critical, with 7 min identified as the optimal duration, ensuring superior nanopattern replication, minimal defects, and improved residual charge characteristics. X‐ray photoelectron spectroscopy revealed an increase in O1s peak intensity with extended UV exposure, indicating that UV irradiation promotes C–O bond formation, thereby enhancing the material's catalytic activity and electronic properties. Atomic force microscopy provided 2D and 3D imaging, confirming high‐fidelity pattern replication, which was further supported by line profile analysis. Additionally, polarized optical microscopy demonstrated uniform liquid crystal alignment on the film, enabling precise light control. These results underscore the potential of SiO2 alignment films fabricated via UV‐NIL with a 7‐min UV exposure for future display technologies. [ABSTRACT FROM AUTHOR]
ISSN:01422421
DOI:10.1002/sia.70028