Advanced Electrochemical Plating Processes of Nano-Twinned Copper for Hybrid Bonding.

Saved in:

Bibliographic Details
Title:	Advanced Electrochemical Plating Processes of Nano-Twinned Copper for Hybrid Bonding.
Authors:	Jianwen Han¹ Jianwen.han@macdermidalpha.com, Pingping Ye¹, Braye, Stephan¹, ElSawy, Abdelhamid¹, Khanna, Harshul¹, Lambert, Veronica¹, Letize, Adam¹, Whitten, Kyle¹, Richardson, Thomas¹, Najjar, Elie¹
Source:	Advancing Microelectronics. 2025, Vol. 52 Issue 5, p10-13. 4p.
Subjects:	Wafer level packaging, Semiconductor wafer bonding, Crystal growth, Packaging equipment, Copper crystals, Electroplating
Abstract:	We developed a series of electrochemical plating (ECP) baths and processes to generate nano-twinned copper (nt-Cu) in wafer-level packaging (WLP) applications to fulfill the demand for copper-to-copper direct bonding and hybrid bonding. The systems show capability to fill complete-copper-seeded features, such as lines, vias and pads with a high density of nt-Cu. We have developed two distinct ECP processes, vertical growth orientation and horizontal growth orientation process, based on feature CD (critical dimension) and A/R (aspect ratio). Both ECP processes ensure that the nt-Cu orientation is consistent on the top part of the features, whether vertical or horizontal. This consistency is crucial for achieving uniform copper crystal orientations on post-CMP (Chemical Mechanical Planarization) wafer surfaces, essential for adequate low-temperature hybrid bonding. By addressing the limitations of existing methods and achieving high-density, uniformly oriented nt-Cu with minimal defects, this process offers enhanced performance for low-temperature hybrid bonding applications. It marks notable progress in the field of advanced packaging technologies. [ABSTRACT FROM AUTHOR]
	Copyright of Advancing Microelectronics is the property of International Microelectronics & Packaging Society and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database:	Engineering Source

Description
Abstract:	We developed a series of electrochemical plating (ECP) baths and processes to generate nano-twinned copper (nt-Cu) in wafer-level packaging (WLP) applications to fulfill the demand for copper-to-copper direct bonding and hybrid bonding. The systems show capability to fill complete-copper-seeded features, such as lines, vias and pads with a high density of nt-Cu. We have developed two distinct ECP processes, vertical growth orientation and horizontal growth orientation process, based on feature CD (critical dimension) and A/R (aspect ratio). Both ECP processes ensure that the nt-Cu orientation is consistent on the top part of the features, whether vertical or horizontal. This consistency is crucial for achieving uniform copper crystal orientations on post-CMP (Chemical Mechanical Planarization) wafer surfaces, essential for adequate low-temperature hybrid bonding. By addressing the limitations of existing methods and achieving high-density, uniformly oriented nt-Cu with minimal defects, this process offers enhanced performance for low-temperature hybrid bonding applications. It marks notable progress in the field of advanced packaging technologies. [ABSTRACT FROM AUTHOR]
ISSN:	23807008