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Synergistic ultra high dielectric permittivity of LiSnFeO4 solid solution for multifunctional high temperature electronics devices.

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Title: Synergistic ultra high dielectric permittivity of LiSnFeO4 solid solution for multifunctional high temperature electronics devices.
Authors: Padhy, Aniket1 (AUTHOR), Nayak, Praveen Priyaranjan2 (AUTHOR), Hota, S.S.2 (AUTHOR), Panda, Debasish2 (AUTHOR), Kumar, Ashish1 (AUTHOR), Mishra, Guru Prasad1 (AUTHOR) gpscmishra.ece@nitrr.ac.in
Source: Ceramics International. Dec2025:Part B, Vol. 51 Issue 30, p64229-64242. 14p.
Subjects: Permittivity, High temperature electronics, Dielectric polarization, Dielectric strength, Impedance spectroscopy, Electric conductivity, Hybrid materials
Abstract: LiSnFeO 4 (LSFO) solid solution is synthesized via a conventional solid-state reaction route to elucidate its structural, dielectric, and transport properties systematically. X-ray diffraction confirmed the formation of a dominant hexagonal phase (space group P 6 3 mc), along with traces of secondary SnO 2. Microstructural analysis revealed uniformly distributed grains, while EDX and FTIR verified compositional homogeneity. Optical measurements indicated an exceptionally narrow indirect bandgap of 0.71 eV, consistent with NIR-active semiconducting behavior. Dielectric studies exhibited strong frequency and temperature dependence, reaching an ultra-high dielectric constant of (∼9 × 105 at 400 °C and 1 kHz), attributed to strong interfacial (Maxwell-Wagner) polarization. AC conductivity followed Jonscher's power law, with a low activation energy (0.196–0.317 eV), confirming a thermally activated hopping mechanism. Impedance and modulus spectroscopy further revealed non-Debye relaxation processes with clear separation of grain and grain-boundary contributions. This synergistic combination of ultra-high dielectric strength, narrow semiconducting bandgap, and high thermal stability underscores LSFO as a promising multifunctional material for next-generation high-temperature electronics, broadband photodetectors, and sustainable energy technologies. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
Description
Abstract:LiSnFeO 4 (LSFO) solid solution is synthesized via a conventional solid-state reaction route to elucidate its structural, dielectric, and transport properties systematically. X-ray diffraction confirmed the formation of a dominant hexagonal phase (space group P 6 3 mc), along with traces of secondary SnO 2. Microstructural analysis revealed uniformly distributed grains, while EDX and FTIR verified compositional homogeneity. Optical measurements indicated an exceptionally narrow indirect bandgap of 0.71 eV, consistent with NIR-active semiconducting behavior. Dielectric studies exhibited strong frequency and temperature dependence, reaching an ultra-high dielectric constant of (∼9 × 105 at 400 °C and 1 kHz), attributed to strong interfacial (Maxwell-Wagner) polarization. AC conductivity followed Jonscher's power law, with a low activation energy (0.196–0.317 eV), confirming a thermally activated hopping mechanism. Impedance and modulus spectroscopy further revealed non-Debye relaxation processes with clear separation of grain and grain-boundary contributions. This synergistic combination of ultra-high dielectric strength, narrow semiconducting bandgap, and high thermal stability underscores LSFO as a promising multifunctional material for next-generation high-temperature electronics, broadband photodetectors, and sustainable energy technologies. [ABSTRACT FROM AUTHOR]
ISSN:02728842
DOI:10.1016/j.ceramint.2025.11.161