Thallium-activated cesium hexafluorosilicate (Cs2SiF6:Tl+) micro-crystalline compound prepared by a facile solvothermal method and its luminescence properties.
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| Title: | Thallium-activated cesium hexafluorosilicate (Cs2SiF6:Tl+) micro-crystalline compound prepared by a facile solvothermal method and its luminescence properties. |
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| Authors: | Daniel, D. Joseph1 (AUTHOR), Devakumar, Balaji2 (AUTHOR), Kim, H.J.1 (AUTHOR) hongjoo@knu.ac.kr |
| Source: | Ceramics International. Jan2026, Vol. 52 Issue 1, p242-251. 10p. |
| Subjects: | Thallium, Photoluminescence, Thermal stability, Solution (Chemistry), X-ray diffraction, Inorganic compounds, Luminescence measurement, Optical devices |
| Abstract: | A heavily thallium-activated cesium hexafluorosilicate compound (Cs 2 SiF 6) was synthesised using a facile solvothermal method. Powder X-ray diffraction pattern analysis confirmed the single-phase of the synthesised compound, which is consistent with standard reference data. Further structural refinement was performed through the Rietveld method using FullProf software and indicating that Cs 2 SiF 6 crystalizes in a cubic crystal system with the space group F m 3 ‾ m. The calculated unit cell parameters are a = 8.91832 Å, α = β = γ = 90°, V = 709.332 Å3. The FE-SEM images reveal that the synthesised compound is well-crystallized, exhibiting a uniform hexagonal morphology with particle sizes ranging from 10 to 50 μm. The elemental distribution and stoichiometry of the synthesised compound were verified through EDS spectral analysis. The XPS analysis verified the presence of thallium in the +1 oxidation state (Tl+), confirming the successful substitution of Cs + ions within the Cs 2 SiF 6 lattice. Thermal behaviour was examined using TGA/DSC, which demonstrated that the material remains stable up to 675 °C. The Tl + activated Cs 2 SiF 6 samples are capable of producing strong emission at 306 nm under X-ray excitation. Photoluminescence measurements at room temperature revealed a maximum emission peak at 312 nm upon excitation with 206 nm radiation. The TL glow curve analysis shows the presence of a trap center at 369 K, and its kinetic parameters were estimated. The luminescence behaviour of thallium-activated cesium hexafluorosilicate has been examined for the first time, and the preliminary findings suggest that the material holds promise for future optical applications. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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