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Reactive Sputtering of SiCN Films: Process Optimization and Bonding Behavior for Cu Hybrid Bonding.

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Title: Reactive Sputtering of SiCN Films: Process Optimization and Bonding Behavior for Cu Hybrid Bonding.
Authors: Choi, Junyoung1 (AUTHOR), Jang, Suin1 (AUTHOR), Kim, Sarah Eunkyung1 (AUTHOR) eunkyung@seoultech.ac.kr
Source: Journal of Electronic Materials. Jan2026, Vol. 55 Issue 1, p1222-1233. 12p.
Subjects: Reactive sputtering, Interfacial bonding, Silicon nitride films, Permittivity, Process optimization, Semiconductor devices
Abstract: As semiconductor devices approach miniaturization limits, 3D packaging with hybrid bonding has emerged as a key solution. This study focuses on silicon carbon nitride (SiCN) films deposited by physical vapor deposition (PVD) as a cost-effective alternative to plasma-enhanced chemical vapor deposition (PECVD) for use as a low-k dielectric in Cu hybrid bonding. SiCN films were fabricated via reactive sputtering, with RF power and Ar/N2 gas flow ratio varied systematically. Higher RF power and gas flow ratios led to increased carbon and nitrogen content and improved film density by about 10%, while surface roughness and contact angle remained stable. Despite a slight increase in dielectric constant with these parameters, values remained below 3.2, confirming low-k characteristics. Ar plasma surface pre-treatment without DI water rinse before bonding at 200 °C led to a carbon-rich interface and a thin SiOₓ layer, significantly improving bonding strength. A maximum shear strength of 15.8 MPa was achieved. The findings indicate that surface treatment plays a more crucial role in bonding quality than deposition conditions. This work demonstrates the potential of PVD-deposited SiCN as a reliable and cost-efficient dielectric material for advanced 3D integration using Cu hybrid bonding. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
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Abstract:As semiconductor devices approach miniaturization limits, 3D packaging with hybrid bonding has emerged as a key solution. This study focuses on silicon carbon nitride (SiCN) films deposited by physical vapor deposition (PVD) as a cost-effective alternative to plasma-enhanced chemical vapor deposition (PECVD) for use as a low-k dielectric in Cu hybrid bonding. SiCN films were fabricated via reactive sputtering, with RF power and Ar/N2 gas flow ratio varied systematically. Higher RF power and gas flow ratios led to increased carbon and nitrogen content and improved film density by about 10%, while surface roughness and contact angle remained stable. Despite a slight increase in dielectric constant with these parameters, values remained below 3.2, confirming low-k characteristics. Ar plasma surface pre-treatment without DI water rinse before bonding at 200 °C led to a carbon-rich interface and a thin SiOₓ layer, significantly improving bonding strength. A maximum shear strength of 15.8 MPa was achieved. The findings indicate that surface treatment plays a more crucial role in bonding quality than deposition conditions. This work demonstrates the potential of PVD-deposited SiCN as a reliable and cost-efficient dielectric material for advanced 3D integration using Cu hybrid bonding. [ABSTRACT FROM AUTHOR]
ISSN:03615235
DOI:10.1007/s11664-025-12552-9