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Reactive Sputtering of SiCN Films: Process Optimization and Bonding Behavior for Cu Hybrid Bonding.

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Title: Reactive Sputtering of SiCN Films: Process Optimization and Bonding Behavior for Cu Hybrid Bonding.
Authors: Choi, Junyoung1 (AUTHOR), Jang, Suin1 (AUTHOR), Kim, Sarah Eunkyung1 (AUTHOR) eunkyung@seoultech.ac.kr
Source: Journal of Electronic Materials. Jan2026, Vol. 55 Issue 1, p1222-1233. 12p.
Subjects: Reactive sputtering, Interfacial bonding, Silicon nitride films, Permittivity, Process optimization, Semiconductor devices
Abstract: As semiconductor devices approach miniaturization limits, 3D packaging with hybrid bonding has emerged as a key solution. This study focuses on silicon carbon nitride (SiCN) films deposited by physical vapor deposition (PVD) as a cost-effective alternative to plasma-enhanced chemical vapor deposition (PECVD) for use as a low-k dielectric in Cu hybrid bonding. SiCN films were fabricated via reactive sputtering, with RF power and Ar/N2 gas flow ratio varied systematically. Higher RF power and gas flow ratios led to increased carbon and nitrogen content and improved film density by about 10%, while surface roughness and contact angle remained stable. Despite a slight increase in dielectric constant with these parameters, values remained below 3.2, confirming low-k characteristics. Ar plasma surface pre-treatment without DI water rinse before bonding at 200 °C led to a carbon-rich interface and a thin SiOₓ layer, significantly improving bonding strength. A maximum shear strength of 15.8 MPa was achieved. The findings indicate that surface treatment plays a more crucial role in bonding quality than deposition conditions. This work demonstrates the potential of PVD-deposited SiCN as a reliable and cost-efficient dielectric material for advanced 3D integration using Cu hybrid bonding. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 190298778
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  Data: Reactive Sputtering of SiCN Films: Process Optimization and Bonding Behavior for Cu Hybrid Bonding.
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  Data: <searchLink fieldCode="AR" term="%22Choi%2C+Junyoung%22">Choi, Junyoung</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Jang%2C+Suin%22">Jang, Suin</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kim%2C+Sarah+Eunkyung%22">Kim, Sarah Eunkyung</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> eunkyung@seoultech.ac.kr</i>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>. Jan2026, Vol. 55 Issue 1, p1222-1233. 12p.
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  Data: <searchLink fieldCode="DE" term="%22Reactive+sputtering%22">Reactive sputtering</searchLink><br /><searchLink fieldCode="DE" term="%22Interfacial+bonding%22">Interfacial bonding</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon+nitride+films%22">Silicon nitride films</searchLink><br /><searchLink fieldCode="DE" term="%22Permittivity%22">Permittivity</searchLink><br /><searchLink fieldCode="DE" term="%22Process+optimization%22">Process optimization</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+devices%22">Semiconductor devices</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: As semiconductor devices approach miniaturization limits, 3D packaging with hybrid bonding has emerged as a key solution. This study focuses on silicon carbon nitride (SiCN) films deposited by physical vapor deposition (PVD) as a cost-effective alternative to plasma-enhanced chemical vapor deposition (PECVD) for use as a low-k dielectric in Cu hybrid bonding. SiCN films were fabricated via reactive sputtering, with RF power and Ar/N2 gas flow ratio varied systematically. Higher RF power and gas flow ratios led to increased carbon and nitrogen content and improved film density by about 10%, while surface roughness and contact angle remained stable. Despite a slight increase in dielectric constant with these parameters, values remained below 3.2, confirming low-k characteristics. Ar plasma surface pre-treatment without DI water rinse before bonding at 200 °C led to a carbon-rich interface and a thin SiOₓ layer, significantly improving bonding strength. A maximum shear strength of 15.8 MPa was achieved. The findings indicate that surface treatment plays a more crucial role in bonding quality than deposition conditions. This work demonstrates the potential of PVD-deposited SiCN as a reliable and cost-efficient dielectric material for advanced 3D integration using Cu hybrid bonding. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1007/s11664-025-12552-9
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      – Code: eng
        Text: English
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      Pagination:
        PageCount: 12
        StartPage: 1222
    Subjects:
      – SubjectFull: Reactive sputtering
        Type: general
      – SubjectFull: Interfacial bonding
        Type: general
      – SubjectFull: Silicon nitride films
        Type: general
      – SubjectFull: Permittivity
        Type: general
      – SubjectFull: Process optimization
        Type: general
      – SubjectFull: Semiconductor devices
        Type: general
    Titles:
      – TitleFull: Reactive Sputtering of SiCN Films: Process Optimization and Bonding Behavior for Cu Hybrid Bonding.
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            NameFull: Choi, Junyoung
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            NameFull: Jang, Suin
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            NameFull: Kim, Sarah Eunkyung
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            – D: 01
              M: 01
              Text: Jan2026
              Type: published
              Y: 2026
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            – TitleFull: Journal of Electronic Materials
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