EFFECT OF Cu-Cu HYBRID BONDING HEIGHT IN THE 3D STACKED DIE CONFIGURATION: THERMAL-STRUCTURAL ANALYSIS.

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Title: EFFECT OF Cu-Cu HYBRID BONDING HEIGHT IN THE 3D STACKED DIE CONFIGURATION: THERMAL-STRUCTURAL ANALYSIS.
Authors: ABDUL AZIZ, MOHD SHARIZAL1, KHOR, C. Y.2 cykhor@unimap.edu.my, GOH, Z. L.1, CHE HALIN, D. S.3,4, STAMBUŁA, S.5, NABIAŁEK, M.5
Source: Archives of Metallurgy & Materials. 2025, Vol. 70 Issue 4, p1785-1790. 6p.
Subjects: Thermal strain, Reliability of electronics, Simulation methods & models, Thermal stresses, Ansys Inc., Copper wire, Yield stress, Stress concentration
Abstract: Advanced packaging technologies, such as Intel’s Embedded Multi-Die Interconnect Bridge and Foveros, have revolutionized semiconductor integration by enabling compact, high-performance devices through 3D stacked die configurations. This study focuses on the warpage effects in 3D stacked die configurations using copper-copper (Cu-Cu) hybrid bonding under thermal cyclic conditions, which are critical for ensuring semiconductor device reliability. The research employs ANSYS simulations through Thermal-Structural Coupling to analyze temperature distribution, thermal strain, and Von-Mises stress across different Cu-Cu hybrid bonding heights. Findings indicate uniform heat transfer across thermal cycles, with significant stress concentrations at corner bonding interfaces. Reducing Cu-Cu hybrid bonding height from 0.025 mm to 0.017 mm mitigates thermal strain and stress, with the 0.017 mm height proving optimal for minimizing warpage effects. This research provides insights crucial for enhancing semiconductor packaging reliability. It addresses industry demands for energy-efficient and compact electronic devices and supports industry standards, cost-efficiency, and innovation in semiconductor engineering. [ABSTRACT FROM AUTHOR]
Copyright of Archives of Metallurgy & Materials is the property of Polish Academy of Sciences and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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DbLabel: Engineering Source
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  Data: <searchLink fieldCode="JN" term="%22Archives+of+Metallurgy+%26+Materials%22">Archives of Metallurgy & Materials</searchLink>. 2025, Vol. 70 Issue 4, p1785-1790. 6p.
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  Data: <searchLink fieldCode="DE" term="%22Thermal+strain%22">Thermal strain</searchLink><br /><searchLink fieldCode="DE" term="%22Reliability+of+electronics%22">Reliability of electronics</searchLink><br /><searchLink fieldCode="DE" term="%22Simulation+methods+%26+models%22">Simulation methods & models</searchLink><br /><searchLink fieldCode="DE" term="%22Thermal+stresses%22">Thermal stresses</searchLink><br /><searchLink fieldCode="DE" term="%22Ansys+Inc%2E%22">Ansys Inc.</searchLink><br /><searchLink fieldCode="DE" term="%22Copper+wire%22">Copper wire</searchLink><br /><searchLink fieldCode="DE" term="%22Yield+stress%22">Yield stress</searchLink><br /><searchLink fieldCode="DE" term="%22Stress+concentration%22">Stress concentration</searchLink>
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  Data: Advanced packaging technologies, such as Intel’s Embedded Multi-Die Interconnect Bridge and Foveros, have revolutionized semiconductor integration by enabling compact, high-performance devices through 3D stacked die configurations. This study focuses on the warpage effects in 3D stacked die configurations using copper-copper (Cu-Cu) hybrid bonding under thermal cyclic conditions, which are critical for ensuring semiconductor device reliability. The research employs ANSYS simulations through Thermal-Structural Coupling to analyze temperature distribution, thermal strain, and Von-Mises stress across different Cu-Cu hybrid bonding heights. Findings indicate uniform heat transfer across thermal cycles, with significant stress concentrations at corner bonding interfaces. Reducing Cu-Cu hybrid bonding height from 0.025 mm to 0.017 mm mitigates thermal strain and stress, with the 0.017 mm height proving optimal for minimizing warpage effects. This research provides insights crucial for enhancing semiconductor packaging reliability. It addresses industry demands for energy-efficient and compact electronic devices and supports industry standards, cost-efficiency, and innovation in semiconductor engineering. [ABSTRACT FROM AUTHOR]
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  Data: <i>Copyright of Archives of Metallurgy & Materials is the property of Polish Academy of Sciences and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.24425/amm.2025.156262
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      – Code: eng
        Text: English
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      – SubjectFull: Thermal strain
        Type: general
      – SubjectFull: Reliability of electronics
        Type: general
      – SubjectFull: Simulation methods & models
        Type: general
      – SubjectFull: Thermal stresses
        Type: general
      – SubjectFull: Ansys Inc.
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      – SubjectFull: Copper wire
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      – SubjectFull: Yield stress
        Type: general
      – SubjectFull: Stress concentration
        Type: general
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      – TitleFull: EFFECT OF Cu-Cu HYBRID BONDING HEIGHT IN THE 3D STACKED DIE CONFIGURATION: THERMAL-STRUCTURAL ANALYSIS.
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            NameFull: ABDUL AZIZ, MOHD SHARIZAL
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            NameFull: KHOR, C. Y.
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            – D: 01
              M: 10
              Text: 2025
              Type: published
              Y: 2025
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