Low-Temperature Synthesis of Highly Preferentially Oriented ε-Ga 2 O 3 Films for Solar-Blind Detector Application.
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| Title: | Low-Temperature Synthesis of Highly Preferentially Oriented ε-Ga 2 O 3 Films for Solar-Blind Detector Application. |
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| Authors: | Tian, He1 (AUTHOR), Zhang, Yijun1,2 (AUTHOR), Wang, Hong1,3 (AUTHOR), Liao, Daogui1 (AUTHOR), Di, Jiale1,2 (AUTHOR), Liu, Chao1,3 (AUTHOR), Ren, Wei1,2 (AUTHOR), Ye, Zuo-Guang3 (AUTHOR) |
| Source: | Nanomaterials (2079-4991). Dec2025, Vol. 15 Issue 24, p1867. 9p. |
| Subjects: | Atomic layer deposition, Photodetectors, Gallium, Optoelectronics, Crystal structure |
| Abstract: | As one of the polymorphs of the gallium oxide family, ε gallium oxide (ε-Ga2O3) demonstrates promising potential in high-power electronic devices and solar-blind photodetection applications. However, the synthesis of pure-phase ε-Ga2O3 remains challenging through low-energy consumption methods, due to its metastable phase of gallium oxide. In this study, we have fabricated pure-phase and highly oriented ε-Ga2O3 thin films on c-plane sapphire substrates via thermal atomic layer deposition (ALD) at a low temperature of 400 °C, utilizing low-reactive trimethylgallium (TMG) as the gallium precursor and ozone (O3) as the oxygen source. X-ray diffraction (XRD) results revealed that the in situ-grown ε-Ga2O3 films exhibit a preferred orientation parallel to the (002) crystallographic plane, and the pure ε phase remains stable following a post-annealing up to 800 °C, but it completely transforms into β-Ga2O3 once the thermal treatment temperature reaches 900 °C. Notably, post-annealing at 800 °C significantly enhanced the crystalline quality of ε-Ga2O3. To evaluate the optoelectronic characteristics, metal–semiconductor–metal (MSM)-structured solar-blind photodetectors were fabricated using the ε-Ga2O3 films. The devices have an extremely low dark current (<1 pA), a high photo-to-dark current ratio (>106), a maximum responsivity (>1 A/W), and the optoelectronic properties maintained stability under varying illumination intensities. This work provides valuable insights into the low-temperature synthesis of high-quality ε-Ga2O3 films and the development of ε-Ga2O3-based solar-blind photodetectors for practical applications. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | As one of the polymorphs of the gallium oxide family, ε gallium oxide (ε-Ga2O3) demonstrates promising potential in high-power electronic devices and solar-blind photodetection applications. However, the synthesis of pure-phase ε-Ga2O3 remains challenging through low-energy consumption methods, due to its metastable phase of gallium oxide. In this study, we have fabricated pure-phase and highly oriented ε-Ga2O3 thin films on c-plane sapphire substrates via thermal atomic layer deposition (ALD) at a low temperature of 400 °C, utilizing low-reactive trimethylgallium (TMG) as the gallium precursor and ozone (O3) as the oxygen source. X-ray diffraction (XRD) results revealed that the in situ-grown ε-Ga2O3 films exhibit a preferred orientation parallel to the (002) crystallographic plane, and the pure ε phase remains stable following a post-annealing up to 800 °C, but it completely transforms into β-Ga2O3 once the thermal treatment temperature reaches 900 °C. Notably, post-annealing at 800 °C significantly enhanced the crystalline quality of ε-Ga2O3. To evaluate the optoelectronic characteristics, metal–semiconductor–metal (MSM)-structured solar-blind photodetectors were fabricated using the ε-Ga2O3 films. The devices have an extremely low dark current (<1 pA), a high photo-to-dark current ratio (>106), a maximum responsivity (>1 A/W), and the optoelectronic properties maintained stability under varying illumination intensities. This work provides valuable insights into the low-temperature synthesis of high-quality ε-Ga2O3 films and the development of ε-Ga2O3-based solar-blind photodetectors for practical applications. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 20794991 |
| DOI: | 10.3390/nano15241867 |
