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Low-Temperature Synthesis of Highly Preferentially Oriented ε-Ga 2 O 3 Films for Solar-Blind Detector Application.

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Title: Low-Temperature Synthesis of Highly Preferentially Oriented ε-Ga 2 O 3 Films for Solar-Blind Detector Application.
Authors: Tian, He1 (AUTHOR), Zhang, Yijun1,2 (AUTHOR), Wang, Hong1,3 (AUTHOR), Liao, Daogui1 (AUTHOR), Di, Jiale1,2 (AUTHOR), Liu, Chao1,3 (AUTHOR), Ren, Wei1,2 (AUTHOR), Ye, Zuo-Guang3 (AUTHOR)
Source: Nanomaterials (2079-4991). Dec2025, Vol. 15 Issue 24, p1867. 9p.
Subjects: Atomic layer deposition, Photodetectors, Gallium, Optoelectronics, Crystal structure
Abstract: As one of the polymorphs of the gallium oxide family, ε gallium oxide (ε-Ga2O3) demonstrates promising potential in high-power electronic devices and solar-blind photodetection applications. However, the synthesis of pure-phase ε-Ga2O3 remains challenging through low-energy consumption methods, due to its metastable phase of gallium oxide. In this study, we have fabricated pure-phase and highly oriented ε-Ga2O3 thin films on c-plane sapphire substrates via thermal atomic layer deposition (ALD) at a low temperature of 400 °C, utilizing low-reactive trimethylgallium (TMG) as the gallium precursor and ozone (O3) as the oxygen source. X-ray diffraction (XRD) results revealed that the in situ-grown ε-Ga2O3 films exhibit a preferred orientation parallel to the (002) crystallographic plane, and the pure ε phase remains stable following a post-annealing up to 800 °C, but it completely transforms into β-Ga2O3 once the thermal treatment temperature reaches 900 °C. Notably, post-annealing at 800 °C significantly enhanced the crystalline quality of ε-Ga2O3. To evaluate the optoelectronic characteristics, metal–semiconductor–metal (MSM)-structured solar-blind photodetectors were fabricated using the ε-Ga2O3 films. The devices have an extremely low dark current (<1 pA), a high photo-to-dark current ratio (>106), a maximum responsivity (>1 A/W), and the optoelectronic properties maintained stability under varying illumination intensities. This work provides valuable insights into the low-temperature synthesis of high-quality ε-Ga2O3 films and the development of ε-Ga2O3-based solar-blind photodetectors for practical applications. [ABSTRACT FROM AUTHOR]
Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Low-Temperature Synthesis of Highly Preferentially Oriented ε-Ga 2 O 3 Films for Solar-Blind Detector Application.
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  Data: As one of the polymorphs of the gallium oxide family, ε gallium oxide (ε-Ga2O3) demonstrates promising potential in high-power electronic devices and solar-blind photodetection applications. However, the synthesis of pure-phase ε-Ga2O3 remains challenging through low-energy consumption methods, due to its metastable phase of gallium oxide. In this study, we have fabricated pure-phase and highly oriented ε-Ga2O3 thin films on c-plane sapphire substrates via thermal atomic layer deposition (ALD) at a low temperature of 400 &#176;C, utilizing low-reactive trimethylgallium (TMG) as the gallium precursor and ozone (O3) as the oxygen source. X-ray diffraction (XRD) results revealed that the in situ-grown ε-Ga2O3 films exhibit a preferred orientation parallel to the (002) crystallographic plane, and the pure ε phase remains stable following a post-annealing up to 800 &#176;C, but it completely transforms into β-Ga2O3 once the thermal treatment temperature reaches 900 &#176;C. Notably, post-annealing at 800 &#176;C significantly enhanced the crystalline quality of ε-Ga2O3. To evaluate the optoelectronic characteristics, metal–semiconductor–metal (MSM)-structured solar-blind photodetectors were fabricated using the ε-Ga2O3 films. The devices have an extremely low dark current (&lt;1 pA), a high photo-to-dark current ratio (&gt;106), a maximum responsivity (&gt;1 A/W), and the optoelectronic properties maintained stability under varying illumination intensities. This work provides valuable insights into the low-temperature synthesis of high-quality ε-Ga2O3 films and the development of ε-Ga2O3-based solar-blind photodetectors for practical applications. [ABSTRACT FROM AUTHOR]
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  Data: &lt;i&gt;Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder&#39;s express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.&lt;/i&gt; (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.3390/nano15241867
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      – Code: eng
        Text: English
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        PageCount: 9
        StartPage: 1867
    Subjects:
      – SubjectFull: Atomic layer deposition
        Type: general
      – SubjectFull: Photodetectors
        Type: general
      – SubjectFull: Gallium
        Type: general
      – SubjectFull: Optoelectronics
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      – SubjectFull: Crystal structure
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      – TitleFull: Low-Temperature Synthesis of Highly Preferentially Oriented ε-Ga 2 O 3 Films for Solar-Blind Detector Application.
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            NameFull: Tian, He
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              Text: Dec2025
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