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Realization of direct current piezoelectric nanogenerators developed from p-ZnO:N nanowires / Polytriaryl amine bilayers.

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Title: Realization of direct current piezoelectric nanogenerators developed from p-ZnO:N nanowires / Polytriaryl amine bilayers.
Authors: Ramyashri, S.1 (AUTHOR), Amiruddin, R.1 (AUTHOR) amir@crescent.education
Source: Journal of Power Sources. Feb2026, Vol. 666, pN.PAG-N.PAG. 1p.
Subjects: Nanogenerators, Piezoelectricity, Triboelectricity, Power density, Finite element method, Voltage, Nanowires
Abstract: This research reports the realization of a piezoelectric nanogenerator (PENG) that generates direct current (DC) piezovoltage using p-ZnO nanowires with a randomly aligned morphology. The N(4 at%) doped p-ZnO nanowires exhibit a carrier concentration of 3.30 x 1017/cm3 and an electrical resistivity of 0.96 Ω cm. The p-ZnO:N nanowire-based PENG were grown on a flexible aluminium (Al) foil substrate, producing a DC voltage of 1.1V and 4.1V during finger pressing/releasing and tapping tests, respectively. The free electrons in the p-ZnO:N nanowires recombine with the N O -V Zn acceptor complex to reduce the screening effect of the ZnO nanowires. Surface topography (AFM) analysis under an external force (∼nN) confirms the generation of piezovoltage across randomly aligned p-ZnO nanowires. The morphology-dependent piezovoltage distribution across the ZnO nanowires is further supported by finite element analysis (FEA). To improve performance, organic PTAA thin film layers are stacked on p-ZnO:N nanowires, producing piezovoltage outputs of 11V and 14.9V during finger-press-release and tapping tests, respectively. The p-ZnO:N nanowires/PTAA-based bilayered PENG delivers a power density of 1.78 μW/cm2 under the finger-tapping test. The five-fold increase in piezovoltage output during finger-tapping is attributed to the triboelectric effect, which induces additional surface charges and suppresses screening. [Display omitted] • Piezoelectric nanogenerator (PENG) with DC piezovoltage using randomly aligned p-ZnO nanowires. • The p-ZnO nanowires/PTAA bilayered PENG generated 14.9 V with power density of 1.78 μW/cm2. • FEA analysis supports the morphology-dependent piezovoltage distribution. • Buckling-driven DC voltage generation mechanism in p-ZnO:N nanowires is analyzed. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
Description
Abstract:This research reports the realization of a piezoelectric nanogenerator (PENG) that generates direct current (DC) piezovoltage using p-ZnO nanowires with a randomly aligned morphology. The N(4 at%) doped p-ZnO nanowires exhibit a carrier concentration of 3.30 x 1017/cm3 and an electrical resistivity of 0.96 Ω cm. The p-ZnO:N nanowire-based PENG were grown on a flexible aluminium (Al) foil substrate, producing a DC voltage of 1.1V and 4.1V during finger pressing/releasing and tapping tests, respectively. The free electrons in the p-ZnO:N nanowires recombine with the N O -V Zn acceptor complex to reduce the screening effect of the ZnO nanowires. Surface topography (AFM) analysis under an external force (∼nN) confirms the generation of piezovoltage across randomly aligned p-ZnO nanowires. The morphology-dependent piezovoltage distribution across the ZnO nanowires is further supported by finite element analysis (FEA). To improve performance, organic PTAA thin film layers are stacked on p-ZnO:N nanowires, producing piezovoltage outputs of 11V and 14.9V during finger-press-release and tapping tests, respectively. The p-ZnO:N nanowires/PTAA-based bilayered PENG delivers a power density of 1.78 μW/cm2 under the finger-tapping test. The five-fold increase in piezovoltage output during finger-tapping is attributed to the triboelectric effect, which induces additional surface charges and suppresses screening. [Display omitted] • Piezoelectric nanogenerator (PENG) with DC piezovoltage using randomly aligned p-ZnO nanowires. • The p-ZnO nanowires/PTAA bilayered PENG generated 14.9 V with power density of 1.78 μW/cm2. • FEA analysis supports the morphology-dependent piezovoltage distribution. • Buckling-driven DC voltage generation mechanism in p-ZnO:N nanowires is analyzed. [ABSTRACT FROM AUTHOR]
ISSN:03787753
DOI:10.1016/j.jpowsour.2025.239183