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Facile synthesis and characterization for Ti-doped Zn0.98-xSi0.02TixO nanocomposites: Enhanced conductivity and tunable band gap for optoelectronic applications.

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Title: Facile synthesis and characterization for Ti-doped Zn0.98-xSi0.02TixO nanocomposites: Enhanced conductivity and tunable band gap for optoelectronic applications.
Authors: Elgarhy, E. E.1 (AUTHOR), Abdelhaleem, Soraya2 (AUTHOR), Zayed, H. A.1 (AUTHOR), Yousif, Nashwa M.3 (AUTHOR), Shalaby, M. S.3 (AUTHOR) phy_m_shalaby@yahoo.com
Source: Applied Physics A: Materials Science & Processing. Jan2026, Vol. 132 Issue 1, p1-16. 16p.
Subjects: Electric conductivity, Band gaps, Nanocomposite materials, Optoelectronics, Chemical synthesis, Titanium silicate, Materials testing, Titanium
Abstract: Synthesis and detailed characterization of Zn0.98−xSi0.02TixO nanocomposites, where titanium content varies from 0.0 to 0.20, were presented. It is employed a straightforward solid-state reaction is employed to prepare the nanocomposites. X-ray diffraction analysis confirmed that the hexagonal wurtzite structure remains intact while experiencing systematic lattice expansion. The a-parameter increased from 3.25 Å to 3.28 Å, and the c-parameter grew from 5.21 Å to 5.24 Å with Ti-incorporation. Crystallite dimensions decreased from 28.3 nm in pure samples to 26.01 nm in heavily doped variants, while dislocation density rose from 1.05 × 10¹⁴ to 11.9 × 10¹⁴ lines/m² by using the Williamson-Hall formula. Scanning electron microscopy showed grain size changes from 300 to 400 nm to a broader 200–400 nm distribution. Temperature-dependent electrical measurements revealed activation energies between 0.089 and 0.129 eV. Optical properties demonstrated band gap widening from 3.21 eV to 3.26 eV, consistent with the Burstein-Moss phenomenon. These findings highlight the potential of controlled titanium doping for developing advanced optoelectronic devices. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
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Abstract:Synthesis and detailed characterization of Zn0.98−xSi0.02TixO nanocomposites, where titanium content varies from 0.0 to 0.20, were presented. It is employed a straightforward solid-state reaction is employed to prepare the nanocomposites. X-ray diffraction analysis confirmed that the hexagonal wurtzite structure remains intact while experiencing systematic lattice expansion. The a-parameter increased from 3.25 Å to 3.28 Å, and the c-parameter grew from 5.21 Å to 5.24 Å with Ti-incorporation. Crystallite dimensions decreased from 28.3 nm in pure samples to 26.01 nm in heavily doped variants, while dislocation density rose from 1.05 × 10¹⁴ to 11.9 × 10¹⁴ lines/m² by using the Williamson-Hall formula. Scanning electron microscopy showed grain size changes from 300 to 400 nm to a broader 200–400 nm distribution. Temperature-dependent electrical measurements revealed activation energies between 0.089 and 0.129 eV. Optical properties demonstrated band gap widening from 3.21 eV to 3.26 eV, consistent with the Burstein-Moss phenomenon. These findings highlight the potential of controlled titanium doping for developing advanced optoelectronic devices. [ABSTRACT FROM AUTHOR]
ISSN:09478396
DOI:10.1007/s00339-025-09201-7