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Research on the bipolar switching properties of flexible neodymium oxide thin film resistance random access memory devices.

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Title: Research on the bipolar switching properties of flexible neodymium oxide thin film resistance random access memory devices.
Authors: Chen, Kai-Huang1,2 (AUTHOR) 5977@gcloud.csu.edu.tw, Kao, Ming-Cheng3 (AUTHOR), Chen, Hsin-Chin1 (AUTHOR), Wang, Yao-Chin1 (AUTHOR), Cheng, Chien-Min4 (AUTHOR), Liu, Wei-Cheng4 (AUTHOR)
Source: Applied Physics A: Materials Science & Processing. Jan2026, Vol. 132 Issue 1, p1-16. 16p.
Subjects: Nonvolatile random-access memory, Nonvolatile memory, Substrates (Materials science), Thin films, Strains & stresses (Mechanics), Rare earth oxides
Abstract: Neodymium oxide (NdOₓ) is a promising switching material for nonvolatile resistive random-access memory (RRAM), yet its behavior on flexible substrates under mechanical stress remains insufficiently explored. In this work, NdOₓ thin films were deposited by rf magnetron sputtering onto ITO/glass and flexible ITO/PEN substrates to form Al/NdOₓ/ITO metal–insulator–metal structures. Baseline evaluation on ITO/glass identified optimal sputtering conditions of 100 W, 20 min deposition, and 4% oxygen, yielding low operating voltages (VSET ≈ 1 V, VRESET ≈ 1 V), endurance of 100 cycles, and retention exceeding 10⁴ s. Mechanical reliability was further assessed on flexible substrates under bending radii of 1–5 cm. The best performance occurred at a curvature radius of 5 cm, maintaining stable bipolar switching for ~ 120 cycles, attributed to strain-modulated filament formation. These results confirm that NdOₓ films enable reliable, low-voltage switching on both rigid and flexible platforms, demonstrating strong potential for future wearable and deformable nonvolatile memory applications. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
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Abstract:Neodymium oxide (NdOₓ) is a promising switching material for nonvolatile resistive random-access memory (RRAM), yet its behavior on flexible substrates under mechanical stress remains insufficiently explored. In this work, NdOₓ thin films were deposited by rf magnetron sputtering onto ITO/glass and flexible ITO/PEN substrates to form Al/NdOₓ/ITO metal–insulator–metal structures. Baseline evaluation on ITO/glass identified optimal sputtering conditions of 100 W, 20 min deposition, and 4% oxygen, yielding low operating voltages (VSET ≈ 1 V, VRESET ≈ 1 V), endurance of 100 cycles, and retention exceeding 10⁴ s. Mechanical reliability was further assessed on flexible substrates under bending radii of 1–5 cm. The best performance occurred at a curvature radius of 5 cm, maintaining stable bipolar switching for ~ 120 cycles, attributed to strain-modulated filament formation. These results confirm that NdOₓ films enable reliable, low-voltage switching on both rigid and flexible platforms, demonstrating strong potential for future wearable and deformable nonvolatile memory applications. [ABSTRACT FROM AUTHOR]
ISSN:09478396
DOI:10.1007/s00339-025-09236-w