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Research on the bipolar switching properties of flexible neodymium oxide thin film resistance random access memory devices.

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Title: Research on the bipolar switching properties of flexible neodymium oxide thin film resistance random access memory devices.
Authors: Chen, Kai-Huang1,2 (AUTHOR) 5977@gcloud.csu.edu.tw, Kao, Ming-Cheng3 (AUTHOR), Chen, Hsin-Chin1 (AUTHOR), Wang, Yao-Chin1 (AUTHOR), Cheng, Chien-Min4 (AUTHOR), Liu, Wei-Cheng4 (AUTHOR)
Source: Applied Physics A: Materials Science & Processing. Jan2026, Vol. 132 Issue 1, p1-16. 16p.
Subjects: Nonvolatile random-access memory, Nonvolatile memory, Substrates (Materials science), Thin films, Strains & stresses (Mechanics), Rare earth oxides
Abstract: Neodymium oxide (NdOₓ) is a promising switching material for nonvolatile resistive random-access memory (RRAM), yet its behavior on flexible substrates under mechanical stress remains insufficiently explored. In this work, NdOₓ thin films were deposited by rf magnetron sputtering onto ITO/glass and flexible ITO/PEN substrates to form Al/NdOₓ/ITO metal–insulator–metal structures. Baseline evaluation on ITO/glass identified optimal sputtering conditions of 100 W, 20 min deposition, and 4% oxygen, yielding low operating voltages (VSET ≈ 1 V, VRESET ≈ 1 V), endurance of 100 cycles, and retention exceeding 10⁴ s. Mechanical reliability was further assessed on flexible substrates under bending radii of 1–5 cm. The best performance occurred at a curvature radius of 5 cm, maintaining stable bipolar switching for ~ 120 cycles, attributed to strain-modulated filament formation. These results confirm that NdOₓ films enable reliable, low-voltage switching on both rigid and flexible platforms, demonstrating strong potential for future wearable and deformable nonvolatile memory applications. [ABSTRACT FROM AUTHOR]
Copyright of Applied Physics A: Materials Science & Processing is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 190959118
AccessLevel: 6
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PubTypeId: academicJournal
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  Data: Research on the bipolar switching properties of flexible neodymium oxide thin film resistance random access memory devices.
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  Data: <searchLink fieldCode="AR" term="%22Chen%2C+Kai-Huang%22">Chen, Kai-Huang</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> 5977@gcloud.csu.edu.tw</i><br /><searchLink fieldCode="AR" term="%22Kao%2C+Ming-Cheng%22">Kao, Ming-Cheng</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chen%2C+Hsin-Chin%22">Chen, Hsin-Chin</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Wang%2C+Yao-Chin%22">Wang, Yao-Chin</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Cheng%2C+Chien-Min%22">Cheng, Chien-Min</searchLink><relatesTo>4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Liu%2C+Wei-Cheng%22">Liu, Wei-Cheng</searchLink><relatesTo>4</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+A%3A+Materials+Science+%26+Processing%22">Applied Physics A: Materials Science & Processing</searchLink>. Jan2026, Vol. 132 Issue 1, p1-16. 16p.
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  Data: <searchLink fieldCode="DE" term="%22Nonvolatile+random-access+memory%22">Nonvolatile random-access memory</searchLink><br /><searchLink fieldCode="DE" term="%22Nonvolatile+memory%22">Nonvolatile memory</searchLink><br /><searchLink fieldCode="DE" term="%22Substrates+%28Materials+science%29%22">Substrates (Materials science)</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Strains+%26+stresses+%28Mechanics%29%22">Strains & stresses (Mechanics)</searchLink><br /><searchLink fieldCode="DE" term="%22Rare+earth+oxides%22">Rare earth oxides</searchLink>
– Name: Abstract
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  Data: Neodymium oxide (NdOₓ) is a promising switching material for nonvolatile resistive random-access memory (RRAM), yet its behavior on flexible substrates under mechanical stress remains insufficiently explored. In this work, NdOₓ thin films were deposited by rf magnetron sputtering onto ITO/glass and flexible ITO/PEN substrates to form Al/NdOₓ/ITO metal–insulator–metal structures. Baseline evaluation on ITO/glass identified optimal sputtering conditions of 100 W, 20 min deposition, and 4% oxygen, yielding low operating voltages (VSET ≈ 1 V, VRESET ≈ 1 V), endurance of 100 cycles, and retention exceeding 10⁴ s. Mechanical reliability was further assessed on flexible substrates under bending radii of 1–5 cm. The best performance occurred at a curvature radius of 5 cm, maintaining stable bipolar switching for ~ 120 cycles, attributed to strain-modulated filament formation. These results confirm that NdOₓ films enable reliable, low-voltage switching on both rigid and flexible platforms, demonstrating strong potential for future wearable and deformable nonvolatile memory applications. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Applied Physics A: Materials Science & Processing is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1007/s00339-025-09236-w
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        Text: English
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      – SubjectFull: Rare earth oxides
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              Text: Jan2026
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              Y: 2026
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