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Observation of out-of-plane ferroelectricity in ∼5 nm ultrathin SrBi2Ta2O9 films for memristors and synapses application.

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Title: Observation of out-of-plane ferroelectricity in ∼5 nm ultrathin SrBi2Ta2O9 films for memristors and synapses application.
Authors: Tan, Li-Ping1 (AUTHOR), Hu, Xue-Feng1 (AUTHOR) xuefeng.hu@hfut.edu.cn, Li, A-Long2 (AUTHOR), Qing, Wei-Wei1 (AUTHOR), Zhou, Ming1 (AUTHOR), Yu, De-Bao2 (AUTHOR), Zhang, Guo-Peng2 (AUTHOR), Mu, Qing-Qing2 (AUTHOR), Wang, Zi-Long2 (AUTHOR), Wang, Xiao-Liang1 (AUTHOR), Bi, Ya-Li1 (AUTHOR), Zhang, Wei1,3 (AUTHOR) zhangw@hfut.edu.cn
Source: Chemical Engineering Journal. Jan2026, Vol. 528, pN.PAG-N.PAG. 1p.
Subjects: Ferroelectricity, Memristors, Thin films, Semiconductor technology, Neuromorphics
Abstract: To address von Neumann bottlenecks in data-intensive computing, ferroelectric memristors have attracted a great deal of attention as one of promising architectures for in-memory computing. Herein, we demonstrate a CMOS-compatible ultrathin ferroelectric memristors utilizing strain-engineered epitaxial SrBi 2 Ta 2 O 9 (SBT). Ultrathin single-crystalline SBT films (∼ 5 nm) were integrated onto Si/SiO 2 substrates via a Ti/Pt buffer layer using laser molecular beam epitaxy (LMBE). The Pt (111) interfacial strain induces a -axis-oriented SBT growth, reorienting intrinsic in-plane polarization to out-of-plane and enabling ferroelectric stability at this thickness—the thinnest achieved for SBT-based devices. The resultant Si/SiO 2 /Ti/Pt/single-crystalline-SBT/Au ferroelectric device exhibits an exciting switching ratio of 255.76 (V read = 0.11 V) with non-volatile memristor behavior. For biosynaptic applications, the SBT-4 device emulates neuromorphic plasticity with 15 ns switching speed, low energy consumption (7 pJ/operation), and endurance exceeding 106 cycles, outperforming most phase change memory. The extended plasticity duration and analog conductance modulation align well with biomimetic learning rules, effectively bridging synaptic emulation and silicon integration. Therefore, the Pt buffer layer may be regarded as a general strategy for epitaxy integration of perovskite oxides onto silicon substrates. By unifying extraordinary ferroelectricity, scalability, and silicon compatibility, this work establishes SBT as a compelling ultrathin ferroelectric material for energy-efficient multifunctional memristors and post-von-Neumann in-memory computing architectures. [Display omitted] • CMOS compatible template for ultrathin single-crystalline perovskite oxide films with controlled crystallinity by laser pulse frequency and film thickness. • Epitaxial co-lattice growth of SBT(100) on Pt(111) plane along with SBT[010] (b -axis)// Pt 1 ¯ 10 and SBT[001] (c -axis)//Pt 11 2 ¯ . • Proposed a ferroelectric resistance switching mechanism coupled with TER and conductive filaments. • Pt-induced out-of-plane polarization in 5 nm SBT (the thinnest ferroelectric SBT). • SBT-4 memristor achieves a switching ratio of 255.77 and bio-synapse emulation attains 7 pJ/operation with 15 ns switching. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
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Abstract:To address von Neumann bottlenecks in data-intensive computing, ferroelectric memristors have attracted a great deal of attention as one of promising architectures for in-memory computing. Herein, we demonstrate a CMOS-compatible ultrathin ferroelectric memristors utilizing strain-engineered epitaxial SrBi 2 Ta 2 O 9 (SBT). Ultrathin single-crystalline SBT films (∼ 5 nm) were integrated onto Si/SiO 2 substrates via a Ti/Pt buffer layer using laser molecular beam epitaxy (LMBE). The Pt (111) interfacial strain induces a -axis-oriented SBT growth, reorienting intrinsic in-plane polarization to out-of-plane and enabling ferroelectric stability at this thickness—the thinnest achieved for SBT-based devices. The resultant Si/SiO 2 /Ti/Pt/single-crystalline-SBT/Au ferroelectric device exhibits an exciting switching ratio of 255.76 (V read = 0.11 V) with non-volatile memristor behavior. For biosynaptic applications, the SBT-4 device emulates neuromorphic plasticity with 15 ns switching speed, low energy consumption (7 pJ/operation), and endurance exceeding 106 cycles, outperforming most phase change memory. The extended plasticity duration and analog conductance modulation align well with biomimetic learning rules, effectively bridging synaptic emulation and silicon integration. Therefore, the Pt buffer layer may be regarded as a general strategy for epitaxy integration of perovskite oxides onto silicon substrates. By unifying extraordinary ferroelectricity, scalability, and silicon compatibility, this work establishes SBT as a compelling ultrathin ferroelectric material for energy-efficient multifunctional memristors and post-von-Neumann in-memory computing architectures. [Display omitted] • CMOS compatible template for ultrathin single-crystalline perovskite oxide films with controlled crystallinity by laser pulse frequency and film thickness. • Epitaxial co-lattice growth of SBT(100) on Pt(111) plane along with SBT[010] (b -axis)// Pt 1 ¯ 10 and SBT[001] (c -axis)//Pt 11 2 ¯ . • Proposed a ferroelectric resistance switching mechanism coupled with TER and conductive filaments. • Pt-induced out-of-plane polarization in 5 nm SBT (the thinnest ferroelectric SBT). • SBT-4 memristor achieves a switching ratio of 255.77 and bio-synapse emulation attains 7 pJ/operation with 15 ns switching. [ABSTRACT FROM AUTHOR]
ISSN:13858947
DOI:10.1016/j.cej.2025.171951