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Investigating the simulation of the nonlinear Kerr effect in defective photonic crystals for light intensity sensing applications.

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Bibliographic Details
Title:	Investigating the simulation of the nonlinear Kerr effect in defective photonic crystals for light intensity sensing applications.
Authors:	Ahmed, Ashour M.¹ (AUTHOR) asmmohamed@imamu.edu.sa
Source:	Sensor Review. 2026, Vol. 46 Issue 2, p311-321. 11p.
Subjects:	Kerr electro-optical effect, Photonic crystals, Light transmission, Optical modulation, Luminosity, Zinc oxide, Calibration, Failure mode & effects analysis
Abstract:	Purpose: This study aims to design and evaluate a photonic crystal (PC) sensor for high-intensity light detection, leveraging the nonlinear Kerr effect. The sensor structure incorporates zinc oxide (ZnO) as a defect layer embedded within alternating multilayers of silicon dioxide (SiO2) and silicon (Si). Design/methodology/approach: The reflection spectrum and defect-mode behavior of the proposed sensor were analyzed using the transfer matrix method, with theoretical results validated through the finite element method. Sensor optimization was achieved by fine-tuning individual layer thicknesses. Additionally, the impact of fabrication-induced geometric deviations (±5% variation in thickness) was investigated to evaluate the device's robustness. The distribution of the electric field was also simulated. Findings: The resonance dip of the defect mode was observed to shift toward shorter wavelengths with increasing light intensity, resulting from a decrease in the refractive index of ZnO due to the Kerr effect. The resonance exhibited a sharp peak and minimal spectral broadening. The sensor demonstrated an average sensitivity of 203.9 nm/(MW/cm2). Moreover, the structure retained reliable optical performance despite fabrication tolerances up to ±5%. Originality/value: This work introduces a novel, high-performance PC sensor that exploits Kerr-induced refractive index modulation in ZnO. The integration of nonlinear optical behavior, precise multilayer engineering and robustness against fabrication errors positions the sensor as a promising solution for high-intensity optical sensing applications. [ABSTRACT FROM AUTHOR]
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Database:	Engineering Source

Description
Abstract:	Purpose: This study aims to design and evaluate a photonic crystal (PC) sensor for high-intensity light detection, leveraging the nonlinear Kerr effect. The sensor structure incorporates zinc oxide (ZnO) as a defect layer embedded within alternating multilayers of silicon dioxide (SiO2) and silicon (Si). Design/methodology/approach: The reflection spectrum and defect-mode behavior of the proposed sensor were analyzed using the transfer matrix method, with theoretical results validated through the finite element method. Sensor optimization was achieved by fine-tuning individual layer thicknesses. Additionally, the impact of fabrication-induced geometric deviations (±5% variation in thickness) was investigated to evaluate the device's robustness. The distribution of the electric field was also simulated. Findings: The resonance dip of the defect mode was observed to shift toward shorter wavelengths with increasing light intensity, resulting from a decrease in the refractive index of ZnO due to the Kerr effect. The resonance exhibited a sharp peak and minimal spectral broadening. The sensor demonstrated an average sensitivity of 203.9 nm/(MW/cm2). Moreover, the structure retained reliable optical performance despite fabrication tolerances up to ±5%. Originality/value: This work introduces a novel, high-performance PC sensor that exploits Kerr-induced refractive index modulation in ZnO. The integration of nonlinear optical behavior, precise multilayer engineering and robustness against fabrication errors positions the sensor as a promising solution for high-intensity optical sensing applications. [ABSTRACT FROM AUTHOR]
ISSN:	02602288