Creation of High-Density Néel Skyrmions by Interfacial-Proximity Engineering.
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| Title: | Creation of High-Density Néel Skyrmions by Interfacial-Proximity Engineering. |
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| Authors: | Zhang, Tingjia1,2 (AUTHOR), Yang, Chendi2 (AUTHOR), Lv, Xiaowei2,3 (AUTHOR), Pei, Ke3,4 (AUTHOR), Yang, Xiao2,5 (AUTHOR), Tan, Wuyang2,6 (AUTHOR), Pan, Junye4 (AUTHOR), Qin, Jiazhuan2 (AUTHOR), Wen, Meichen5 (AUTHOR), Li, Wei1 (AUTHOR), Liang, Jia6 (AUTHOR), Che, Renchao2 (AUTHOR) |
| Source: | Materials (1996-1944). Jan2026, Vol. 19 Issue 2, p340. 18p. |
| Subjects: | Skyrmions, Spintronics, Transmission electron microscopy, Micromagnetics, Interfaces (Physical sciences), Thickness measurement, Heterostructures, Spin-orbit interactions |
| Abstract: | Two-dimensional ferromagnets are promising for compact spintronic devices. However, their centrosymmetric structure inherently suppresses the Dzyaloshinskii–Moriya interaction (DMI), hindering the stabilization of chiral spin texture. Here, a tunable DMI induced by interface symmetry breaking in Fe3GeTe2/MoS2 vdW heterostructures is reported. We find that the interfacial DMI stabilizes Néel-type skyrmions in Fe3GeTe2/MoS2 heterostructures under zero magnetic field, with nucleation observed at 64 Oe and annihilation at 800 Oe via Lorentz transmission electron microscopy (LTEM). Skyrmion density peaks (~0.57 skyrmions/μm2) at a Fe3GeTe2 thickness of ~30 nm and decays beyond ~60 nm, indicating a finite penetration depth of the proximity effect. Such modulated DMI enables a stabilized nucleation of Néel type skyrmions, allowing for precise control over their density, revealed by Lorentz transmission electron microscopy. Thickness-dependent measurements confirm the interfacial origin of this stabilization. Skyrmion density reaches peak in thin Fe3GeTe2 layers and decays beyond ~60 nm, defining the finite penetration depth of the proximity effect. Micromagnetic simulations reproduce the field-dependent evolution of skyrmions, showing a strong correlation to interfacial DMI. First-principles calculations attribute this DMI to asymmetric charge redistribution and spin–orbit coupling at the heterointerface. This work establishes interface engineering as a universal strategy for stabilizing skyrmions in centrosymmetric vdW ferromagnets, offering a thickness-tunable platform for next-generation two-dimensional spintronic devices. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | Two-dimensional ferromagnets are promising for compact spintronic devices. However, their centrosymmetric structure inherently suppresses the Dzyaloshinskii–Moriya interaction (DMI), hindering the stabilization of chiral spin texture. Here, a tunable DMI induced by interface symmetry breaking in Fe3GeTe2/MoS2 vdW heterostructures is reported. We find that the interfacial DMI stabilizes Néel-type skyrmions in Fe3GeTe2/MoS2 heterostructures under zero magnetic field, with nucleation observed at 64 Oe and annihilation at 800 Oe via Lorentz transmission electron microscopy (LTEM). Skyrmion density peaks (~0.57 skyrmions/μm2) at a Fe3GeTe2 thickness of ~30 nm and decays beyond ~60 nm, indicating a finite penetration depth of the proximity effect. Such modulated DMI enables a stabilized nucleation of Néel type skyrmions, allowing for precise control over their density, revealed by Lorentz transmission electron microscopy. Thickness-dependent measurements confirm the interfacial origin of this stabilization. Skyrmion density reaches peak in thin Fe3GeTe2 layers and decays beyond ~60 nm, defining the finite penetration depth of the proximity effect. Micromagnetic simulations reproduce the field-dependent evolution of skyrmions, showing a strong correlation to interfacial DMI. First-principles calculations attribute this DMI to asymmetric charge redistribution and spin–orbit coupling at the heterointerface. This work establishes interface engineering as a universal strategy for stabilizing skyrmions in centrosymmetric vdW ferromagnets, offering a thickness-tunable platform for next-generation two-dimensional spintronic devices. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 19961944 |
| DOI: | 10.3390/ma19020340 |