Design and Fabrication of a Low-Voltage OPAMP Based on a-IGZO Thin-Film Transistors.
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| Title: | Design and Fabrication of a Low-Voltage OPAMP Based on a-IGZO Thin-Film Transistors. |
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| Authors: | Torres-Sánchez, Arturo1 (AUTHOR), Hernandez-Luna, Isai S.1 (AUTHOR), Hernández-Cuevas, Francisco J.1 (AUTHOR), León-Puertos, Cuauhtémoc1 (AUTHOR), Hernández-Como, Norberto1 (AUTHOR) nohernandezc@ipn.mx |
| Source: | Nanomaterials (2079-4991). Jan2026, Vol. 16 Issue 2, p84. 11p. |
| Subjects: | Thin film transistors, Operational amplifiers, Analog circuits, Fabrication (Manufacturing), Analog electronic systems, Charge carrier mobility |
| Abstract: | In the last few years, Thin Film Transistors (TFTs) based on materials such as amorphous Indium–Gallium–Zinc Oxide (a-IGZO) have gained interest in large-area and low-cost electronics due to their high carrier mobility, high on/off current ratio, low off-state current, and steep subthreshold slope. These characteristics make IGZO TFTs suitable for radio-frequency identification (RFID) tags, analog-to-digital converters (ADCs), logic circuits, sensors, and analog components, including operational amplifiers (OPAMPs). This work presents the implementation and characterization of an OPAMP based on n-type a-IGZO TFTs fabricated on glass substrate. Two previously reported design strategies were integrated: a positive feedback network to increase the output impedance and a topology to enhance the transconductance of the driver transistors, both in the differential input stage. A gain of 26 dB, a bandwidth of 2.4 kHz, a gain–bandwidth product (GBWP) of 48 kHz, and a phase margin of 64° were obtained, which confirms the reliability of the design and the fabrication process. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | In the last few years, Thin Film Transistors (TFTs) based on materials such as amorphous Indium–Gallium–Zinc Oxide (a-IGZO) have gained interest in large-area and low-cost electronics due to their high carrier mobility, high on/off current ratio, low off-state current, and steep subthreshold slope. These characteristics make IGZO TFTs suitable for radio-frequency identification (RFID) tags, analog-to-digital converters (ADCs), logic circuits, sensors, and analog components, including operational amplifiers (OPAMPs). This work presents the implementation and characterization of an OPAMP based on n-type a-IGZO TFTs fabricated on glass substrate. Two previously reported design strategies were integrated: a positive feedback network to increase the output impedance and a topology to enhance the transconductance of the driver transistors, both in the differential input stage. A gain of 26 dB, a bandwidth of 2.4 kHz, a gain–bandwidth product (GBWP) of 48 kHz, and a phase margin of 64° were obtained, which confirms the reliability of the design and the fabrication process. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 20794991 |
| DOI: | 10.3390/nano16020084 |
