Design and Fabrication of a Low-Voltage OPAMP Based on a-IGZO Thin-Film Transistors.
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| Title: | Design and Fabrication of a Low-Voltage OPAMP Based on a-IGZO Thin-Film Transistors. |
|---|---|
| Authors: | Torres-Sánchez, Arturo1 (AUTHOR), Hernandez-Luna, Isai S.1 (AUTHOR), Hernández-Cuevas, Francisco J.1 (AUTHOR), León-Puertos, Cuauhtémoc1 (AUTHOR), Hernández-Como, Norberto1 (AUTHOR) nohernandezc@ipn.mx |
| Source: | Nanomaterials (2079-4991). Jan2026, Vol. 16 Issue 2, p84. 11p. |
| Subjects: | Thin film transistors, Operational amplifiers, Analog circuits, Fabrication (Manufacturing), Analog electronic systems, Charge carrier mobility |
| Abstract: | In the last few years, Thin Film Transistors (TFTs) based on materials such as amorphous Indium–Gallium–Zinc Oxide (a-IGZO) have gained interest in large-area and low-cost electronics due to their high carrier mobility, high on/off current ratio, low off-state current, and steep subthreshold slope. These characteristics make IGZO TFTs suitable for radio-frequency identification (RFID) tags, analog-to-digital converters (ADCs), logic circuits, sensors, and analog components, including operational amplifiers (OPAMPs). This work presents the implementation and characterization of an OPAMP based on n-type a-IGZO TFTs fabricated on glass substrate. Two previously reported design strategies were integrated: a positive feedback network to increase the output impedance and a topology to enhance the transconductance of the driver transistors, both in the differential input stage. A gain of 26 dB, a bandwidth of 2.4 kHz, a gain–bandwidth product (GBWP) of 48 kHz, and a phase margin of 64° were obtained, which confirms the reliability of the design and the fabrication process. [ABSTRACT FROM AUTHOR] |
| Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Header | DbId: egs DbLabel: Engineering Source An: 191216551 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Design and Fabrication of a Low-Voltage OPAMP Based on a-IGZO Thin-Film Transistors. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Torres-Sánchez%2C+Arturo%22">Torres-Sánchez, Arturo</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Hernandez-Luna%2C+Isai+S%2E%22">Hernandez-Luna, Isai S.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Hernández-Cuevas%2C+Francisco+J%2E%22">Hernández-Cuevas, Francisco J.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22León-Puertos%2C+Cuauhtémoc%22">León-Puertos, Cuauhtémoc</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Hernández-Como%2C+Norberto%22">Hernández-Como, Norberto</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> nohernandezc@ipn.mx</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. Jan2026, Vol. 16 Issue 2, p84. 11p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Thin+film+transistors%22">Thin film transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Operational+amplifiers%22">Operational amplifiers</searchLink><br /><searchLink fieldCode="DE" term="%22Analog+circuits%22">Analog circuits</searchLink><br /><searchLink fieldCode="DE" term="%22Fabrication+%28Manufacturing%29%22">Fabrication (Manufacturing)</searchLink><br /><searchLink fieldCode="DE" term="%22Analog+electronic+systems%22">Analog electronic systems</searchLink><br /><searchLink fieldCode="DE" term="%22Charge+carrier+mobility%22">Charge carrier mobility</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: In the last few years, Thin Film Transistors (TFTs) based on materials such as amorphous Indium–Gallium–Zinc Oxide (a-IGZO) have gained interest in large-area and low-cost electronics due to their high carrier mobility, high on/off current ratio, low off-state current, and steep subthreshold slope. These characteristics make IGZO TFTs suitable for radio-frequency identification (RFID) tags, analog-to-digital converters (ADCs), logic circuits, sensors, and analog components, including operational amplifiers (OPAMPs). This work presents the implementation and characterization of an OPAMP based on n-type a-IGZO TFTs fabricated on glass substrate. Two previously reported design strategies were integrated: a positive feedback network to increase the output impedance and a topology to enhance the transconductance of the driver transistors, both in the differential input stage. A gain of 26 dB, a bandwidth of 2.4 kHz, a gain–bandwidth product (GBWP) of 48 kHz, and a phase margin of 64° were obtained, which confirms the reliability of the design and the fabrication process. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.3390/nano16020084 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 11 StartPage: 84 Subjects: – SubjectFull: Thin film transistors Type: general – SubjectFull: Operational amplifiers Type: general – SubjectFull: Analog circuits Type: general – SubjectFull: Fabrication (Manufacturing) Type: general – SubjectFull: Analog electronic systems Type: general – SubjectFull: Charge carrier mobility Type: general Titles: – TitleFull: Design and Fabrication of a Low-Voltage OPAMP Based on a-IGZO Thin-Film Transistors. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Torres-Sánchez, Arturo – PersonEntity: Name: NameFull: Hernandez-Luna, Isai S. – PersonEntity: Name: NameFull: Hernández-Cuevas, Francisco J. – PersonEntity: Name: NameFull: León-Puertos, Cuauhtémoc – PersonEntity: Name: NameFull: Hernández-Como, Norberto IsPartOfRelationships: – BibEntity: Dates: – D: 15 M: 01 Text: Jan2026 Type: published Y: 2026 Identifiers: – Type: issn-print Value: 20794991 Numbering: – Type: volume Value: 16 – Type: issue Value: 2 Titles: – TitleFull: Nanomaterials (2079-4991) Type: main |
| ResultId | 1 |
