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Synergistic layer engineering for high-efficiency blue emission in pure-bromide quasi-2D perovskite light-emitting diodes.

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Title: Synergistic layer engineering for high-efficiency blue emission in pure-bromide quasi-2D perovskite light-emitting diodes.
Authors: Yu, Jiaming1 (AUTHOR), Jia, Bochao1 (AUTHOR), Zhang, Shuguang1,2 (AUTHOR) mssgzhang@scut.edu.cn, Guo, Yachun1 (AUTHOR), Liang, Yue1,2 (AUTHOR), Chen, Jiangshan1,2 (AUTHOR), Lan, Linfeng1,2 (AUTHOR), Peng, Junbiao1,2 (AUTHOR)
Source: Chemical Engineering Journal. Feb2026, Vol. 529, pN.PAG-N.PAG. 1p.
Subjects: Charge injection, Quantum efficiency, Thin film devices, Surface preparation, Photon emission
Abstract: Metal halide perovskite materials are highly versatile for optoelectronic applications, owing to their solution-processability, tunable bandgaps, low cost, and high photoluminescence quantum yields (PLQY). While quasi-2D perovskite light-emitting diodes (PeLEDs) are particularly attractive for high-efficiency emission, their performance is often severely limited by the complex interplay between the emissive layer and carrier transport layers. Here, we develop a cooperative layer-engineering approach that simultaneously optimizes the emissive and hole transport layers to enhance both radiative efficiency and charge injection in quasi-2D PeLEDs. The synergistic dual-engineering strategy refers to a functionally complementary regulation of phase distribution and defect/ion behavior rather than a simple co-addition of two additives. We first introduce a dual-additive approach, incorporating ZnBr 2 and sodium 2-bromoethanesulfonate (SBES), into the emissive layer to co-regulate crystallinity, control dimensionality, and passivate ionic defects. This emissive-layer optimization alone results in a substantial performance increase, raising the maximum luminance from 80 cd/m2 to 1152 cd/m2 and external quantum efficiency (EQE) from 2.89 % to 7.30 %. Subsequently, the PEDOT:PSS layer is surface-passivated to further improve energy-level alignment and suppress interfacial traps, thereby enhancing carrier injection. The resulting devices achieve a maximum luminance of 2276 cd/m2 and an EQE of 10.38 %, demonstrating that coordinated engineering of emissive and transport layers can synergistically optimize light emission. This work provides a general strategy for high-performance quasi-2D PeLEDs, highlighting the critical role of combined additive and interface engineering in achieving efficient and stable optoelectronic devices. Dual-strategy optimization, combining SBES-mediated layer engineering and Arg-modified interfacial engineering, is demonstrated for high-performance blue pure-bromide quasi-2D PeLEDs. This synergistic approach effectively manages dimensional control, defect passivation, and carrier injection simultaneously, boosting the EQE to 10.38 %. [Display omitted] • A dual-synergistic layer engineering strategy combining bulk and interface optimization is proposed; • ZnBr 2 and SBES additives synergistically regulate crystallization and defect passivation; • Arg-modified PEDOT:PSS enhances energy-level alignment and suppresses interfacial quenching, optimizing device performance. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
Description
Abstract:Metal halide perovskite materials are highly versatile for optoelectronic applications, owing to their solution-processability, tunable bandgaps, low cost, and high photoluminescence quantum yields (PLQY). While quasi-2D perovskite light-emitting diodes (PeLEDs) are particularly attractive for high-efficiency emission, their performance is often severely limited by the complex interplay between the emissive layer and carrier transport layers. Here, we develop a cooperative layer-engineering approach that simultaneously optimizes the emissive and hole transport layers to enhance both radiative efficiency and charge injection in quasi-2D PeLEDs. The synergistic dual-engineering strategy refers to a functionally complementary regulation of phase distribution and defect/ion behavior rather than a simple co-addition of two additives. We first introduce a dual-additive approach, incorporating ZnBr 2 and sodium 2-bromoethanesulfonate (SBES), into the emissive layer to co-regulate crystallinity, control dimensionality, and passivate ionic defects. This emissive-layer optimization alone results in a substantial performance increase, raising the maximum luminance from 80 cd/m2 to 1152 cd/m2 and external quantum efficiency (EQE) from 2.89 % to 7.30 %. Subsequently, the PEDOT:PSS layer is surface-passivated to further improve energy-level alignment and suppress interfacial traps, thereby enhancing carrier injection. The resulting devices achieve a maximum luminance of 2276 cd/m2 and an EQE of 10.38 %, demonstrating that coordinated engineering of emissive and transport layers can synergistically optimize light emission. This work provides a general strategy for high-performance quasi-2D PeLEDs, highlighting the critical role of combined additive and interface engineering in achieving efficient and stable optoelectronic devices. Dual-strategy optimization, combining SBES-mediated layer engineering and Arg-modified interfacial engineering, is demonstrated for high-performance blue pure-bromide quasi-2D PeLEDs. This synergistic approach effectively manages dimensional control, defect passivation, and carrier injection simultaneously, boosting the EQE to 10.38 %. [Display omitted] • A dual-synergistic layer engineering strategy combining bulk and interface optimization is proposed; • ZnBr 2 and SBES additives synergistically regulate crystallization and defect passivation; • Arg-modified PEDOT:PSS enhances energy-level alignment and suppresses interfacial quenching, optimizing device performance. [ABSTRACT FROM AUTHOR]
ISSN:13858947
DOI:10.1016/j.cej.2026.172643