Synergistic layer engineering for high-efficiency blue emission in pure-bromide quasi-2D perovskite light-emitting diodes.
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| Title: | Synergistic layer engineering for high-efficiency blue emission in pure-bromide quasi-2D perovskite light-emitting diodes. |
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| Authors: | Yu, Jiaming1 (AUTHOR), Jia, Bochao1 (AUTHOR), Zhang, Shuguang1,2 (AUTHOR) mssgzhang@scut.edu.cn, Guo, Yachun1 (AUTHOR), Liang, Yue1,2 (AUTHOR), Chen, Jiangshan1,2 (AUTHOR), Lan, Linfeng1,2 (AUTHOR), Peng, Junbiao1,2 (AUTHOR) |
| Source: | Chemical Engineering Journal. Feb2026, Vol. 529, pN.PAG-N.PAG. 1p. |
| Subjects: | Charge injection, Quantum efficiency, Thin film devices, Surface preparation, Photon emission |
| Abstract: | Metal halide perovskite materials are highly versatile for optoelectronic applications, owing to their solution-processability, tunable bandgaps, low cost, and high photoluminescence quantum yields (PLQY). While quasi-2D perovskite light-emitting diodes (PeLEDs) are particularly attractive for high-efficiency emission, their performance is often severely limited by the complex interplay between the emissive layer and carrier transport layers. Here, we develop a cooperative layer-engineering approach that simultaneously optimizes the emissive and hole transport layers to enhance both radiative efficiency and charge injection in quasi-2D PeLEDs. The synergistic dual-engineering strategy refers to a functionally complementary regulation of phase distribution and defect/ion behavior rather than a simple co-addition of two additives. We first introduce a dual-additive approach, incorporating ZnBr 2 and sodium 2-bromoethanesulfonate (SBES), into the emissive layer to co-regulate crystallinity, control dimensionality, and passivate ionic defects. This emissive-layer optimization alone results in a substantial performance increase, raising the maximum luminance from 80 cd/m2 to 1152 cd/m2 and external quantum efficiency (EQE) from 2.89 % to 7.30 %. Subsequently, the PEDOT:PSS layer is surface-passivated to further improve energy-level alignment and suppress interfacial traps, thereby enhancing carrier injection. The resulting devices achieve a maximum luminance of 2276 cd/m2 and an EQE of 10.38 %, demonstrating that coordinated engineering of emissive and transport layers can synergistically optimize light emission. This work provides a general strategy for high-performance quasi-2D PeLEDs, highlighting the critical role of combined additive and interface engineering in achieving efficient and stable optoelectronic devices. Dual-strategy optimization, combining SBES-mediated layer engineering and Arg-modified interfacial engineering, is demonstrated for high-performance blue pure-bromide quasi-2D PeLEDs. This synergistic approach effectively manages dimensional control, defect passivation, and carrier injection simultaneously, boosting the EQE to 10.38 %. [Display omitted] • A dual-synergistic layer engineering strategy combining bulk and interface optimization is proposed; • ZnBr 2 and SBES additives synergistically regulate crystallization and defect passivation; • Arg-modified PEDOT:PSS enhances energy-level alignment and suppresses interfacial quenching, optimizing device performance. [ABSTRACT FROM AUTHOR] |
| Copyright of Chemical Engineering Journal is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 191447117 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Synergistic layer engineering for high-efficiency blue emission in pure-bromide quasi-2D perovskite light-emitting diodes. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Yu%2C+Jiaming%22">Yu, Jiaming</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Jia%2C+Bochao%22">Jia, Bochao</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhang%2C+Shuguang%22">Zhang, Shuguang</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> mssgzhang@scut.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Guo%2C+Yachun%22">Guo, Yachun</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Liang%2C+Yue%22">Liang, Yue</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chen%2C+Jiangshan%22">Chen, Jiangshan</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Lan%2C+Linfeng%22">Lan, Linfeng</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Peng%2C+Junbiao%22">Peng, Junbiao</searchLink><relatesTo>1,2</relatesTo> (AUTHOR) – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Chemical+Engineering+Journal%22">Chemical Engineering Journal</searchLink>. Feb2026, Vol. 529, pN.PAG-N.PAG. 1p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Charge+injection%22">Charge injection</searchLink><br /><searchLink fieldCode="DE" term="%22Quantum+efficiency%22">Quantum efficiency</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+film+devices%22">Thin film devices</searchLink><br /><searchLink fieldCode="DE" term="%22Surface+preparation%22">Surface preparation</searchLink><br /><searchLink fieldCode="DE" term="%22Photon+emission%22">Photon emission</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Metal halide perovskite materials are highly versatile for optoelectronic applications, owing to their solution-processability, tunable bandgaps, low cost, and high photoluminescence quantum yields (PLQY). While quasi-2D perovskite light-emitting diodes (PeLEDs) are particularly attractive for high-efficiency emission, their performance is often severely limited by the complex interplay between the emissive layer and carrier transport layers. Here, we develop a cooperative layer-engineering approach that simultaneously optimizes the emissive and hole transport layers to enhance both radiative efficiency and charge injection in quasi-2D PeLEDs. The synergistic dual-engineering strategy refers to a functionally complementary regulation of phase distribution and defect/ion behavior rather than a simple co-addition of two additives. We first introduce a dual-additive approach, incorporating ZnBr 2 and sodium 2-bromoethanesulfonate (SBES), into the emissive layer to co-regulate crystallinity, control dimensionality, and passivate ionic defects. This emissive-layer optimization alone results in a substantial performance increase, raising the maximum luminance from 80 cd/m2 to 1152 cd/m2 and external quantum efficiency (EQE) from 2.89 % to 7.30 %. Subsequently, the PEDOT:PSS layer is surface-passivated to further improve energy-level alignment and suppress interfacial traps, thereby enhancing carrier injection. The resulting devices achieve a maximum luminance of 2276 cd/m2 and an EQE of 10.38 %, demonstrating that coordinated engineering of emissive and transport layers can synergistically optimize light emission. This work provides a general strategy for high-performance quasi-2D PeLEDs, highlighting the critical role of combined additive and interface engineering in achieving efficient and stable optoelectronic devices. Dual-strategy optimization, combining SBES-mediated layer engineering and Arg-modified interfacial engineering, is demonstrated for high-performance blue pure-bromide quasi-2D PeLEDs. This synergistic approach effectively manages dimensional control, defect passivation, and carrier injection simultaneously, boosting the EQE to 10.38 %. [Display omitted] • A dual-synergistic layer engineering strategy combining bulk and interface optimization is proposed; • ZnBr 2 and SBES additives synergistically regulate crystallization and defect passivation; • Arg-modified PEDOT:PSS enhances energy-level alignment and suppresses interfacial quenching, optimizing device performance. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Chemical Engineering Journal is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1016/j.cej.2026.172643 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 1 StartPage: N.PAG Subjects: – SubjectFull: Charge injection Type: general – SubjectFull: Quantum efficiency Type: general – SubjectFull: Thin film devices Type: general – SubjectFull: Surface preparation Type: general – SubjectFull: Photon emission Type: general Titles: – TitleFull: Synergistic layer engineering for high-efficiency blue emission in pure-bromide quasi-2D perovskite light-emitting diodes. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Yu, Jiaming – PersonEntity: Name: NameFull: Jia, Bochao – PersonEntity: Name: NameFull: Zhang, Shuguang – PersonEntity: Name: NameFull: Guo, Yachun – PersonEntity: Name: NameFull: Liang, Yue – PersonEntity: Name: NameFull: Chen, Jiangshan – PersonEntity: Name: NameFull: Lan, Linfeng – PersonEntity: Name: NameFull: Peng, Junbiao IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 02 Text: Feb2026 Type: published Y: 2026 Identifiers: – Type: issn-print Value: 13858947 Numbering: – Type: volume Value: 529 Titles: – TitleFull: Chemical Engineering Journal Type: main |
| ResultId | 1 |
