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Circuit-Level leakage reduction techniques in CMOS sense amplifiers for SRAM and TCAM: A review.

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Title: Circuit-Level leakage reduction techniques in CMOS sense amplifiers for SRAM and TCAM: A review.
Authors: Kishore, Devesh1 (AUTHOR) kishore.devesh@gmail.com, Chakraborty, Saswata2 (AUTHOR) saswata.cmeri@gmail.com, Biswas, Arindam3 (AUTHOR) arindam.biswas@knu.ac.in, Dumka, Ankur4 (AUTHOR) ankurdumka@wit.ac.in
Source: Analog Integrated Circuits & Signal Processing. Feb2026, Vol. 126 Issue 2, p1-28. 28p.
Subjects: CMOS amplifiers, Static random access memory, Nanoelectronics, Computer storage devices
Abstract: As CMOS technology advances into deep-submicron nodes, leakage power has become a critical challenge for designing energy-efficient sense amplifiers in memory applications. High leakage currents increase overall power consumption and limit memory efficiency, necessitating effective reduction strategies. This review focuses on circuit-level leakage reduction techniques specifically tailored for CMOS sense amplifier designs utilized in SRAM and TCAM systems. It systematically categorizes sense amplifier types—voltage-mode, current-mode, and charge-transfer—and analyzes their leakage characteristics and mitigation methods. Advanced approaches such as LECTOR and LCNT are evaluated for their trade-offs in power consumption, performance, and area. Unlike existing surveys, this work highlights recent innovations in low-leakage operation for modern CMOS nodes, providing designers with comprehensive insights to optimize sense amplifier configurations for leakage-sensitive applications and guiding future low-power memory research directions. [ABSTRACT FROM AUTHOR]
Copyright of Analog Integrated Circuits & Signal Processing is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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DbLabel: Engineering Source
An: 191552153
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  Data: Circuit-Level leakage reduction techniques in CMOS sense amplifiers for SRAM and TCAM: A review.
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  Data: <searchLink fieldCode="AR" term="%22Kishore%2C+Devesh%22">Kishore, Devesh</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> kishore.devesh@gmail.com</i><br /><searchLink fieldCode="AR" term="%22Chakraborty%2C+Saswata%22">Chakraborty, Saswata</searchLink><relatesTo>2</relatesTo> (AUTHOR)<i> saswata.cmeri@gmail.com</i><br /><searchLink fieldCode="AR" term="%22Biswas%2C+Arindam%22">Biswas, Arindam</searchLink><relatesTo>3</relatesTo> (AUTHOR)<i> arindam.biswas@knu.ac.in</i><br /><searchLink fieldCode="AR" term="%22Dumka%2C+Ankur%22">Dumka, Ankur</searchLink><relatesTo>4</relatesTo> (AUTHOR)<i> ankurdumka@wit.ac.in</i>
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  Data: <searchLink fieldCode="JN" term="%22Analog+Integrated+Circuits+%26+Signal+Processing%22">Analog Integrated Circuits & Signal Processing</searchLink>. Feb2026, Vol. 126 Issue 2, p1-28. 28p.
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  Data: <searchLink fieldCode="DE" term="%22CMOS+amplifiers%22">CMOS amplifiers</searchLink><br /><searchLink fieldCode="DE" term="%22Static+random+access+memory%22">Static random access memory</searchLink><br /><searchLink fieldCode="DE" term="%22Nanoelectronics%22">Nanoelectronics</searchLink><br /><searchLink fieldCode="DE" term="%22Computer+storage+devices%22">Computer storage devices</searchLink>
– Name: Abstract
  Label: Abstract
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  Data: As CMOS technology advances into deep-submicron nodes, leakage power has become a critical challenge for designing energy-efficient sense amplifiers in memory applications. High leakage currents increase overall power consumption and limit memory efficiency, necessitating effective reduction strategies. This review focuses on circuit-level leakage reduction techniques specifically tailored for CMOS sense amplifier designs utilized in SRAM and TCAM systems. It systematically categorizes sense amplifier types—voltage-mode, current-mode, and charge-transfer—and analyzes their leakage characteristics and mitigation methods. Advanced approaches such as LECTOR and LCNT are evaluated for their trade-offs in power consumption, performance, and area. Unlike existing surveys, this work highlights recent innovations in low-leakage operation for modern CMOS nodes, providing designers with comprehensive insights to optimize sense amplifier configurations for leakage-sensitive applications and guiding future low-power memory research directions. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Analog Integrated Circuits & Signal Processing is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1007/s10470-026-02562-w
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      – Code: eng
        Text: English
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        PageCount: 28
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    Subjects:
      – SubjectFull: CMOS amplifiers
        Type: general
      – SubjectFull: Static random access memory
        Type: general
      – SubjectFull: Nanoelectronics
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      – SubjectFull: Computer storage devices
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      – TitleFull: Circuit-Level leakage reduction techniques in CMOS sense amplifiers for SRAM and TCAM: A review.
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            NameFull: Chakraborty, Saswata
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            NameFull: Biswas, Arindam
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            NameFull: Dumka, Ankur
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            – D: 01
              M: 02
              Text: Feb2026
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              Y: 2026
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