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Sb2Se3 microbelt-reduced graphene oxide-Se microtube heterojunction for a self-powered UV-NIR broadband photodetector with polarization imaging.

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Bibliographic Details
Title:	Sb2Se3 microbelt-reduced graphene oxide-Se microtube heterojunction for a self-powered UV-NIR broadband photodetector with polarization imaging.
Authors:	Yu, Pingping¹ (AUTHOR), Li, Pengfan¹ (AUTHOR), Huang, Yuxin¹ (AUTHOR), Yu, Xuewei¹ (AUTHOR), Sun, Lin¹ (AUTHOR), Jiang, Yanfeng¹ (AUTHOR) jiangyf@jiangnan.edu.cn
Source:	Journal of Materials Science: Materials in Electronics. Feb2026, Vol. 37 Issue 6, p1-13. 13p.
Abstract:	Photodetectors (PDs) based on Sb2Se3 have a high anisotropy ratio and a low responsivity but allow for an efficient response to visible and near-infrared light. Se PD have a moderate anisotropy ratio, excellent photoresponsivity, and quick response in the UV–Visible range. In this work, high-quality Sb2Se3 microbelts (MBs) and Se microtubes (MTs) were synthesized via chemical vapor deposition and integrated into an Sb2Se3-rGO-Se heterojunction photodetector by drop-casting rGO nanosheets using MXene as electrodes. Incorporating rGO improves charge carrier transport efficiency by creating a graded band structure and expanding the contact region between the Sb2Se3-MB and Se-MT. Under 0 V bias and 806 nm, the Sb2Se3-rGO-Se PD exhibits on/off ratio of 367, responsivity of 37.41 mA W−1, specific detectivity of 2.15 × 1011 Jones, anisotropic ratio of 1.69, and response times of 31/39 ms, respectively. These values correspond to improvements of 118 times, 2.98 times, 16.54 times, and 1.18 times, respectively, compared to the Sb2Se3-MB PD (0.4 V). The Sb2Se3-rGO-Se PD exhibits excellent polarization-sensitive properties, as demonstrated by polarization imaging at “JNU”. This confirms that the Sb2Se3-rGO-Se PD not only shows enhanced optoelectronic performance across various metrics but also demonstrates significant potential for application in polarization imaging. [ABSTRACT FROM AUTHOR]
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Database:	Engineering Source

Description
Abstract:	Photodetectors (PDs) based on Sb2Se3 have a high anisotropy ratio and a low responsivity but allow for an efficient response to visible and near-infrared light. Se PD have a moderate anisotropy ratio, excellent photoresponsivity, and quick response in the UV–Visible range. In this work, high-quality Sb2Se3 microbelts (MBs) and Se microtubes (MTs) were synthesized via chemical vapor deposition and integrated into an Sb2Se3-rGO-Se heterojunction photodetector by drop-casting rGO nanosheets using MXene as electrodes. Incorporating rGO improves charge carrier transport efficiency by creating a graded band structure and expanding the contact region between the Sb2Se3-MB and Se-MT. Under 0 V bias and 806 nm, the Sb2Se3-rGO-Se PD exhibits on/off ratio of 367, responsivity of 37.41 mA W−1, specific detectivity of 2.15 × 1011 Jones, anisotropic ratio of 1.69, and response times of 31/39 ms, respectively. These values correspond to improvements of 118 times, 2.98 times, 16.54 times, and 1.18 times, respectively, compared to the Sb2Se3-MB PD (0.4 V). The Sb2Se3-rGO-Se PD exhibits excellent polarization-sensitive properties, as demonstrated by polarization imaging at “JNU”. This confirms that the Sb2Se3-rGO-Se PD not only shows enhanced optoelectronic performance across various metrics but also demonstrates significant potential for application in polarization imaging. [ABSTRACT FROM AUTHOR]
ISSN:	09574522
DOI:	10.1007/s10854-026-16763-6