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Sb2Se3 microbelt-reduced graphene oxide-Se microtube heterojunction for a self-powered UV-NIR broadband photodetector with polarization imaging.

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Title: Sb2Se3 microbelt-reduced graphene oxide-Se microtube heterojunction for a self-powered UV-NIR broadband photodetector with polarization imaging.
Authors: Yu, Pingping1 (AUTHOR), Li, Pengfan1 (AUTHOR), Huang, Yuxin1 (AUTHOR), Yu, Xuewei1 (AUTHOR), Sun, Lin1 (AUTHOR), Jiang, Yanfeng1 (AUTHOR) jiangyf@jiangnan.edu.cn
Source: Journal of Materials Science: Materials in Electronics. Feb2026, Vol. 37 Issue 6, p1-13. 13p.
Abstract: Photodetectors (PDs) based on Sb2Se3 have a high anisotropy ratio and a low responsivity but allow for an efficient response to visible and near-infrared light. Se PD have a moderate anisotropy ratio, excellent photoresponsivity, and quick response in the UV–Visible range. In this work, high-quality Sb2Se3 microbelts (MBs) and Se microtubes (MTs) were synthesized via chemical vapor deposition and integrated into an Sb2Se3-rGO-Se heterojunction photodetector by drop-casting rGO nanosheets using MXene as electrodes. Incorporating rGO improves charge carrier transport efficiency by creating a graded band structure and expanding the contact region between the Sb2Se3-MB and Se-MT. Under 0 V bias and 806 nm, the Sb2Se3-rGO-Se PD exhibits on/off ratio of 367, responsivity of 37.41 mA W−1, specific detectivity of 2.15 × 1011 Jones, anisotropic ratio of 1.69, and response times of 31/39 ms, respectively. These values correspond to improvements of 118 times, 2.98 times, 16.54 times, and 1.18 times, respectively, compared to the Sb2Se3-MB PD (0.4 V). The Sb2Se3-rGO-Se PD exhibits excellent polarization-sensitive properties, as demonstrated by polarization imaging at “JNU”. This confirms that the Sb2Se3-rGO-Se PD not only shows enhanced optoelectronic performance across various metrics but also demonstrates significant potential for application in polarization imaging. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Sb<subscript>2</subscript>Se<subscript>3</subscript> microbelt-reduced graphene oxide-Se microtube heterojunction for a self-powered UV-NIR broadband photodetector with polarization imaging.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Yu%2C+Pingping%22">Yu, Pingping</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Li%2C+Pengfan%22">Li, Pengfan</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Huang%2C+Yuxin%22">Huang, Yuxin</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Yu%2C+Xuewei%22">Yu, Xuewei</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Sun%2C+Lin%22">Sun, Lin</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Jiang%2C+Yanfeng%22">Jiang, Yanfeng</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> jiangyf@jiangnan.edu.cn</i>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>. Feb2026, Vol. 37 Issue 6, p1-13. 13p.
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Photodetectors (PDs) based on Sb2Se3 have a high anisotropy ratio and a low responsivity but allow for an efficient response to visible and near-infrared light. Se PD have a moderate anisotropy ratio, excellent photoresponsivity, and quick response in the UV–Visible range. In this work, high-quality Sb2Se3 microbelts (MBs) and Se microtubes (MTs) were synthesized via chemical vapor deposition and integrated into an Sb2Se3-rGO-Se heterojunction photodetector by drop-casting rGO nanosheets using MXene as electrodes. Incorporating rGO improves charge carrier transport efficiency by creating a graded band structure and expanding the contact region between the Sb2Se3-MB and Se-MT. Under 0 V bias and 806 nm, the Sb2Se3-rGO-Se PD exhibits on/off ratio of 367, responsivity of 37.41 mA W−1, specific detectivity of 2.15 × 1011 Jones, anisotropic ratio of 1.69, and response times of 31/39 ms, respectively. These values correspond to improvements of 118 times, 2.98 times, 16.54 times, and 1.18 times, respectively, compared to the Sb2Se3-MB PD (0.4 V). The Sb2Se3-rGO-Se PD exhibits excellent polarization-sensitive properties, as demonstrated by polarization imaging at “JNU”. This confirms that the Sb2Se3-rGO-Se PD not only shows enhanced optoelectronic performance across various metrics but also demonstrates significant potential for application in polarization imaging. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1007/s10854-026-16763-6
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 13
        StartPage: 1
    Titles:
      – TitleFull: Sb2Se3 microbelt-reduced graphene oxide-Se microtube heterojunction for a self-powered UV-NIR broadband photodetector with polarization imaging.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Yu, Pingping
      – PersonEntity:
          Name:
            NameFull: Li, Pengfan
      – PersonEntity:
          Name:
            NameFull: Huang, Yuxin
      – PersonEntity:
          Name:
            NameFull: Yu, Xuewei
      – PersonEntity:
          Name:
            NameFull: Sun, Lin
      – PersonEntity:
          Name:
            NameFull: Jiang, Yanfeng
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 21
              M: 02
              Text: Feb2026
              Type: published
              Y: 2026
          Identifiers:
            – Type: issn-print
              Value: 09574522
          Numbering:
            – Type: volume
              Value: 37
            – Type: issue
              Value: 6
          Titles:
            – TitleFull: Journal of Materials Science: Materials in Electronics
              Type: main
ResultId 1