View in EDS

Solid-phase heteroepitaxy of oriented Sb2Se3 on GaAs for birefringent thin films.

Saved in:
Bibliographic Details
Title: Solid-phase heteroepitaxy of oriented Sb2Se3 on GaAs for birefringent thin films.
Authors: Xiao, Kelly1 (AUTHOR) kellyx@stanford.edu, Shen, Yuejun1,2 (AUTHOR), Vailionis, Arturas3,4 (AUTHOR), Skipper, Alec M.5 (AUTHOR), Preidl, Anna-Katharina1 (AUTHOR), Lindenberg, Aaron M.1,2,6 (AUTHOR), Mukherjee, Kunal1 (AUTHOR) kunalm@stanford.edu
Source: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films. Mar2026, Vol. 44 Issue 2, p1-10. 10p.
Subjects: Solid-state phase transformations, Gallium arsenide semiconductors, Molecular beam epitaxy, Optical polarization, Optical coatings, Semiconductor materials
Abstract: We investigate the amorphous-to-crystalline transformation of antimony selenide (Sb2Se3) on UHV-prepared GaAs (001) substrates. In the bulk orthorhombic form, Sb2Se3 is a layered quasi-1D semiconductor with highly anisotropic properties of interest for optical and electronic devices. We find that an amorphous layer deposited by molecular beam epitaxy annealed at or above 230 °C yields a textured-epitaxial structure among some randomly oriented domains. The textured-epitaxial Sb2Se3 grains are oriented with the covalently bonded "1D axis" constrained in-plane to GaAs [110] and with multiple van der Waals (hk0) orientations out-of-plane. The same texture was achieved exclusively without randomly oriented grains using continuous-wave laser radiation, highlighting the use of thermal and optical methods to yield anisotropic crystalline Sb2Se3 films directly from the amorphous phase. Polarized reflectance and polarized microscopy confirm the unique state of in-plane birefringence in the crystallized thin film. Overall, we show that solid-phase heteroepitaxy provides additional pathways to the integration of low-symmetry chalcogenide semiconductors for demanding applications where the inherent anisotropy needs to be preserved. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
Description
Abstract:We investigate the amorphous-to-crystalline transformation of antimony selenide (Sb2Se3) on UHV-prepared GaAs (001) substrates. In the bulk orthorhombic form, Sb2Se3 is a layered quasi-1D semiconductor with highly anisotropic properties of interest for optical and electronic devices. We find that an amorphous layer deposited by molecular beam epitaxy annealed at or above 230 °C yields a textured-epitaxial structure among some randomly oriented domains. The textured-epitaxial Sb2Se3 grains are oriented with the covalently bonded "1D axis" constrained in-plane to GaAs [110] and with multiple van der Waals (hk0) orientations out-of-plane. The same texture was achieved exclusively without randomly oriented grains using continuous-wave laser radiation, highlighting the use of thermal and optical methods to yield anisotropic crystalline Sb2Se3 films directly from the amorphous phase. Polarized reflectance and polarized microscopy confirm the unique state of in-plane birefringence in the crystallized thin film. Overall, we show that solid-phase heteroepitaxy provides additional pathways to the integration of low-symmetry chalcogenide semiconductors for demanding applications where the inherent anisotropy needs to be preserved. [ABSTRACT FROM AUTHOR]
ISSN:07342101
DOI:10.1116/6.0005097