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Influence of Ga inclusion on DC electrical conductivity and switching phenomenon of binary chalcogenide Se80Sn20 films for phase change memory implementations.

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Title: Influence of Ga inclusion on DC electrical conductivity and switching phenomenon of binary chalcogenide Se80Sn20 films for phase change memory implementations.
Authors: El-Metwally, E. G.1 (AUTHOR), Mohamed, B. S.1 (AUTHOR), Bekheet, A. E.1 (AUTHOR) ashrafbekhet@edu.asu.edu.eg
Source: Journal of Materials Science: Materials in Electronics. Mar2026, Vol. 37 Issue 9, p1-18. 18p.
Subjects: Chalcogenide films, Phase change memory, Vapor-plating, Gallium alloys, Phase transitions, Amorphous semiconductors, Chalcogenide glass, Electric conductivity
Abstract: Amorphous Se80Sn20–xGax (x = 0, 5, 10, and 15 at %) thin films were synthesized from bulk glasses by thermal evaporation technique. Differential thermal analysis (DTA) reveals that glass transition temperature T g decreases from 491 to 475 K with Ga content. The dc electrical conductivity σ dc is found to increase with temperature in the range (303–403 K) and decrease with film thickness in the range of thickness (119–727 nm). The dc electrical conduction activation energy Δ E σ is thickness independent and rises from 0.218 to 0.622 eV with rising Ga content with charge transport via hopping of charge carriers among localized states. Memory switching behavior is observed with switching voltage V ¯ th rising with film thickness d and reducing with rising temperature. Switching voltage activation energy increases from 0.103 to 0.293 eV with the increase of Ga content. The obtained switching data were explained via electrothermal model. These outcomes establish the suitableness of the analyzed compositions for a wide variety of optoelectronic utilizations, involving optical storing of information, memory switch devices, and phase-changing memories. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
Description
Abstract:Amorphous Se80Sn20–xGax (x = 0, 5, 10, and 15 at %) thin films were synthesized from bulk glasses by thermal evaporation technique. Differential thermal analysis (DTA) reveals that glass transition temperature T g decreases from 491 to 475 K with Ga content. The dc electrical conductivity σ dc is found to increase with temperature in the range (303–403 K) and decrease with film thickness in the range of thickness (119–727 nm). The dc electrical conduction activation energy Δ E σ is thickness independent and rises from 0.218 to 0.622 eV with rising Ga content with charge transport via hopping of charge carriers among localized states. Memory switching behavior is observed with switching voltage V ¯ th rising with film thickness d and reducing with rising temperature. Switching voltage activation energy increases from 0.103 to 0.293 eV with the increase of Ga content. The obtained switching data were explained via electrothermal model. These outcomes establish the suitableness of the analyzed compositions for a wide variety of optoelectronic utilizations, involving optical storing of information, memory switch devices, and phase-changing memories. [ABSTRACT FROM AUTHOR]
ISSN:09574522
DOI:10.1007/s10854-026-16835-7