Influence of Ga inclusion on DC electrical conductivity and switching phenomenon of binary chalcogenide Se80Sn20 films for phase change memory implementations.
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| Title: | Influence of Ga inclusion on DC electrical conductivity and switching phenomenon of binary chalcogenide Se |
|---|---|
| Authors: | El-Metwally, E. G.1 (AUTHOR), Mohamed, B. S.1 (AUTHOR), Bekheet, A. E.1 (AUTHOR) ashrafbekhet@edu.asu.edu.eg |
| Source: | Journal of Materials Science: Materials in Electronics. Mar2026, Vol. 37 Issue 9, p1-18. 18p. |
| Subjects: | Chalcogenide films, Phase change memory, Vapor-plating, Gallium alloys, Phase transitions, Amorphous semiconductors, Chalcogenide glass, Electric conductivity |
| Abstract: | Amorphous Se80Sn20–xGax (x = 0, 5, 10, and 15 at %) thin films were synthesized from bulk glasses by thermal evaporation technique. Differential thermal analysis (DTA) reveals that glass transition temperature T g decreases from 491 to 475 K with Ga content. The dc electrical conductivity σ dc is found to increase with temperature in the range (303–403 K) and decrease with film thickness in the range of thickness (119–727 nm). The dc electrical conduction activation energy Δ E σ is thickness independent and rises from 0.218 to 0.622 eV with rising Ga content with charge transport via hopping of charge carriers among localized states. Memory switching behavior is observed with switching voltage V ¯ th rising with film thickness d and reducing with rising temperature. Switching voltage activation energy increases from 0.103 to 0.293 eV with the increase of Ga content. The obtained switching data were explained via electrothermal model. These outcomes establish the suitableness of the analyzed compositions for a wide variety of optoelectronic utilizations, involving optical storing of information, memory switch devices, and phase-changing memories. [ABSTRACT FROM AUTHOR] |
| Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 192430572 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Influence of Ga inclusion on DC electrical conductivity and switching phenomenon of binary chalcogenide Se<subscript>80</subscript>Sn<subscript>20</subscript> films for phase change memory implementations. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22El-Metwally%2C+E%2E+G%2E%22">El-Metwally, E. G.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Mohamed%2C+B%2E+S%2E%22">Mohamed, B. S.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Bekheet%2C+A%2E+E%2E%22">Bekheet, A. E.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> ashrafbekhet@edu.asu.edu.eg</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>. Mar2026, Vol. 37 Issue 9, p1-18. 18p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Chalcogenide+films%22">Chalcogenide films</searchLink><br /><searchLink fieldCode="DE" term="%22Phase+change+memory%22">Phase change memory</searchLink><br /><searchLink fieldCode="DE" term="%22Vapor-plating%22">Vapor-plating</searchLink><br /><searchLink fieldCode="DE" term="%22Gallium+alloys%22">Gallium alloys</searchLink><br /><searchLink fieldCode="DE" term="%22Phase+transitions%22">Phase transitions</searchLink><br /><searchLink fieldCode="DE" term="%22Amorphous+semiconductors%22">Amorphous semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Chalcogenide+glass%22">Chalcogenide glass</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+conductivity%22">Electric conductivity</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Amorphous Se80Sn20–xGax (x = 0, 5, 10, and 15 at %) thin films were synthesized from bulk glasses by thermal evaporation technique. Differential thermal analysis (DTA) reveals that glass transition temperature T g decreases from 491 to 475 K with Ga content. The dc electrical conductivity σ dc is found to increase with temperature in the range (303–403 K) and decrease with film thickness in the range of thickness (119–727 nm). The dc electrical conduction activation energy Δ E σ is thickness independent and rises from 0.218 to 0.622 eV with rising Ga content with charge transport via hopping of charge carriers among localized states. Memory switching behavior is observed with switching voltage V ¯ th rising with film thickness d and reducing with rising temperature. Switching voltage activation energy increases from 0.103 to 0.293 eV with the increase of Ga content. The obtained switching data were explained via electrothermal model. These outcomes establish the suitableness of the analyzed compositions for a wide variety of optoelectronic utilizations, involving optical storing of information, memory switch devices, and phase-changing memories. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s10854-026-16835-7 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 18 StartPage: 1 Subjects: – SubjectFull: Chalcogenide films Type: general – SubjectFull: Phase change memory Type: general – SubjectFull: Vapor-plating Type: general – SubjectFull: Gallium alloys Type: general – SubjectFull: Phase transitions Type: general – SubjectFull: Amorphous semiconductors Type: general – SubjectFull: Chalcogenide glass Type: general – SubjectFull: Electric conductivity Type: general Titles: – TitleFull: Influence of Ga inclusion on DC electrical conductivity and switching phenomenon of binary chalcogenide Se80Sn20 films for phase change memory implementations. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: El-Metwally, E. G. – PersonEntity: Name: NameFull: Mohamed, B. S. – PersonEntity: Name: NameFull: Bekheet, A. E. IsPartOfRelationships: – BibEntity: Dates: – D: 21 M: 03 Text: Mar2026 Type: published Y: 2026 Identifiers: – Type: issn-print Value: 09574522 Numbering: – Type: volume Value: 37 – Type: issue Value: 9 Titles: – TitleFull: Journal of Materials Science: Materials in Electronics Type: main |
| ResultId | 1 |
