View in EDS

Selective inhibition of interfacial ion diffusion in NiCuZn ferrite-Al2O3 ceramics during LTCC: The dual roles of sol-gel derived SiO2 and ZrO2 barrier layers.

Saved in:
Bibliographic Details
Title: Selective inhibition of interfacial ion diffusion in NiCuZn ferrite-Al2O3 ceramics during LTCC: The dual roles of sol-gel derived SiO2 and ZrO2 barrier layers.
Authors: Li, Yiyang1 (AUTHOR), Huang, Xu1 (AUTHOR) xuhuangswust@foxmail.com, Liu, Jingsong1,2 (AUTHOR) feram@163.com, Yi, Yong1 (AUTHOR), Li, Enzhu3 (AUTHOR)
Source: Ceramics International. Apr2026:Part A, Vol. 52 Issue 9, p11258-11269. 12p.
Subjects: Low Temperature Cofired Ceramic technology, Diffusion control, Nickel ferrite, Oxide ceramics, Electromagnetism
Abstract: Excessive interfacial diffusion during low-temperature co-firing of Al 2 O 3 /NCZF composites degrades electromagnetic properties by introducing unwanted ions into ferrite or dielectric ceramic sites. To suppress interdiffusion, sol-gel-derived SiO 2 /ZrO 2 barrier layers were fabricated at the interface. The microstructure and elemental distribution across the Al 2 O 3 /NCZF interface were characterized using SEM, EDS, and EPMA. XRD, HRTEM, and AC-TEM characterized phase composition, microstructure, and dislocations. Results indicate that after the introduction of the SiO 2 and ZrO 2 barrier layers, the phase structures of both materials remained unchanged, and no new phases were formed. Under the combined effect of ZrO 2 capturing high-valent ions via oxygen vacancies and SiO 2 effectively capturing transition metal ions and Zn2+-enriched segregation zone, the ZrO 2 layer demonstrates superior blocking against Al3+, Zn2+, and Ni2+ diffusion. In contrast, SiO 2 is more effective against Fe3+ and Cu2+. Both achieve optimal inhibition at 2–3 layers and help alleviate interphase lattice distortion. Consequently, the dielectric loss decreased from 0.0018 to 0.0015 (SiO 2) and 0.0014 (ZrO 2), while the saturation magnetization increased from 48.613 emu/g to 59.861 emu/g (SiO 2) and 59.668 emu/g (ZrO 2). Notably, the achievement of excellent electromagnetic properties through the introduction of these diffusion barrier layers does not compromise thermal management efficiency. [ABSTRACT FROM AUTHOR]
Copyright of Ceramics International is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
Description
Abstract:Excessive interfacial diffusion during low-temperature co-firing of Al 2 O 3 /NCZF composites degrades electromagnetic properties by introducing unwanted ions into ferrite or dielectric ceramic sites. To suppress interdiffusion, sol-gel-derived SiO 2 /ZrO 2 barrier layers were fabricated at the interface. The microstructure and elemental distribution across the Al 2 O 3 /NCZF interface were characterized using SEM, EDS, and EPMA. XRD, HRTEM, and AC-TEM characterized phase composition, microstructure, and dislocations. Results indicate that after the introduction of the SiO 2 and ZrO 2 barrier layers, the phase structures of both materials remained unchanged, and no new phases were formed. Under the combined effect of ZrO 2 capturing high-valent ions via oxygen vacancies and SiO 2 effectively capturing transition metal ions and Zn2+-enriched segregation zone, the ZrO 2 layer demonstrates superior blocking against Al3+, Zn2+, and Ni2+ diffusion. In contrast, SiO 2 is more effective against Fe3+ and Cu2+. Both achieve optimal inhibition at 2–3 layers and help alleviate interphase lattice distortion. Consequently, the dielectric loss decreased from 0.0018 to 0.0015 (SiO 2) and 0.0014 (ZrO 2), while the saturation magnetization increased from 48.613 emu/g to 59.861 emu/g (SiO 2) and 59.668 emu/g (ZrO 2). Notably, the achievement of excellent electromagnetic properties through the introduction of these diffusion barrier layers does not compromise thermal management efficiency. [ABSTRACT FROM AUTHOR]
ISSN:02728842
DOI:10.1016/j.ceramint.2026.01.288