Size-Dependent Emission Enhancement in Deep-Ultraviolet AlGaN Microrods.
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| Title: | Size-Dependent Emission Enhancement in Deep-Ultraviolet AlGaN Microrods. |
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| Authors: | Sun, Xu1 (AUTHOR), Yan, Ziwen1 (AUTHOR), Xu, Tong1 (AUTHOR), Zhu, Jiajun1 (AUTHOR), Xie, Zili1 (AUTHOR), Xiu, Xiangqian1 (AUTHOR), Chen, Dunjun1 (AUTHOR), Liu, Bin1 (AUTHOR), Shi, Yi1 (AUTHOR), Zhang, Rong1 (AUTHOR), Zheng, Youdou1 (AUTHOR), Chen, Peng1 (AUTHOR) pchen@nju.edu.cn |
| Source: | Nanomaterials (2079-4991). Mar2026, Vol. 16 Issue 6, p355. 13p. |
| Subjects: | Cathodoluminescence, Quantum wells, Ultraviolet radiation, Semiconductor materials, Plasma etching, Radiative transitions, Etching reagents |
| Abstract: | High-Al-content AlGaN microrods represent an effective platform for engineering deep-ultraviolet (DUV) emission. Here, we fabricated AlGaN microrods with varying diameters (2, 3, and 4 μm) via a top-down approach involving inductively coupled plasma dry etching followed by a KOH wet chemical modification. Their crystallographic facets and size-dependent optical properties were systematically investigated using scanning electron microscopy (SEM), cathodoluminescence (CL) spectroscopy, and CL mapping. We found that the KOH treatment selectively forms a-plane-dominated sidewalls on the high-Al-content portion of the microrods, whereas the etch pit bottoms stabilize as m-plane facets. Notably, the CL spectra show that the band-edge emission intensity of the 2 μm microrods is enhanced by a factor of 3.76 compared to the 4 μm structures. CL mapping further unveils the competitive dynamics between radiative recombination within the quantum wells and non-radiative recombination at surface states. These findings pinpoint 2 μm as the optimal diameter among the investigated range for maximizing spontaneous emission from these high-Al-content AlGaN microrods. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | High-Al-content AlGaN microrods represent an effective platform for engineering deep-ultraviolet (DUV) emission. Here, we fabricated AlGaN microrods with varying diameters (2, 3, and 4 μm) via a top-down approach involving inductively coupled plasma dry etching followed by a KOH wet chemical modification. Their crystallographic facets and size-dependent optical properties were systematically investigated using scanning electron microscopy (SEM), cathodoluminescence (CL) spectroscopy, and CL mapping. We found that the KOH treatment selectively forms a-plane-dominated sidewalls on the high-Al-content portion of the microrods, whereas the etch pit bottoms stabilize as m-plane facets. Notably, the CL spectra show that the band-edge emission intensity of the 2 μm microrods is enhanced by a factor of 3.76 compared to the 4 μm structures. CL mapping further unveils the competitive dynamics between radiative recombination within the quantum wells and non-radiative recombination at surface states. These findings pinpoint 2 μm as the optimal diameter among the investigated range for maximizing spontaneous emission from these high-Al-content AlGaN microrods. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 20794991 |
| DOI: | 10.3390/nano16060355 |
