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Size-Dependent Emission Enhancement in Deep-Ultraviolet AlGaN Microrods.

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Title: Size-Dependent Emission Enhancement in Deep-Ultraviolet AlGaN Microrods.
Authors: Sun, Xu1 (AUTHOR), Yan, Ziwen1 (AUTHOR), Xu, Tong1 (AUTHOR), Zhu, Jiajun1 (AUTHOR), Xie, Zili1 (AUTHOR), Xiu, Xiangqian1 (AUTHOR), Chen, Dunjun1 (AUTHOR), Liu, Bin1 (AUTHOR), Shi, Yi1 (AUTHOR), Zhang, Rong1 (AUTHOR), Zheng, Youdou1 (AUTHOR), Chen, Peng1 (AUTHOR) pchen@nju.edu.cn
Source: Nanomaterials (2079-4991). Mar2026, Vol. 16 Issue 6, p355. 13p.
Subjects: Cathodoluminescence, Quantum wells, Ultraviolet radiation, Semiconductor materials, Plasma etching, Radiative transitions, Etching reagents
Abstract: High-Al-content AlGaN microrods represent an effective platform for engineering deep-ultraviolet (DUV) emission. Here, we fabricated AlGaN microrods with varying diameters (2, 3, and 4 μm) via a top-down approach involving inductively coupled plasma dry etching followed by a KOH wet chemical modification. Their crystallographic facets and size-dependent optical properties were systematically investigated using scanning electron microscopy (SEM), cathodoluminescence (CL) spectroscopy, and CL mapping. We found that the KOH treatment selectively forms a-plane-dominated sidewalls on the high-Al-content portion of the microrods, whereas the etch pit bottoms stabilize as m-plane facets. Notably, the CL spectra show that the band-edge emission intensity of the 2 μm microrods is enhanced by a factor of 3.76 compared to the 4 μm structures. CL mapping further unveils the competitive dynamics between radiative recombination within the quantum wells and non-radiative recombination at surface states. These findings pinpoint 2 μm as the optimal diameter among the investigated range for maximizing spontaneous emission from these high-Al-content AlGaN microrods. [ABSTRACT FROM AUTHOR]
Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Size-Dependent Emission Enhancement in Deep-Ultraviolet AlGaN Microrods.
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  Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. Mar2026, Vol. 16 Issue 6, p355. 13p.
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  Data: <searchLink fieldCode="DE" term="%22Cathodoluminescence%22">Cathodoluminescence</searchLink><br /><searchLink fieldCode="DE" term="%22Quantum+wells%22">Quantum wells</searchLink><br /><searchLink fieldCode="DE" term="%22Ultraviolet+radiation%22">Ultraviolet radiation</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+materials%22">Semiconductor materials</searchLink><br /><searchLink fieldCode="DE" term="%22Plasma+etching%22">Plasma etching</searchLink><br /><searchLink fieldCode="DE" term="%22Radiative+transitions%22">Radiative transitions</searchLink><br /><searchLink fieldCode="DE" term="%22Etching+reagents%22">Etching reagents</searchLink>
– Name: Abstract
  Label: Abstract
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  Data: High-Al-content AlGaN microrods represent an effective platform for engineering deep-ultraviolet (DUV) emission. Here, we fabricated AlGaN microrods with varying diameters (2, 3, and 4 μm) via a top-down approach involving inductively coupled plasma dry etching followed by a KOH wet chemical modification. Their crystallographic facets and size-dependent optical properties were systematically investigated using scanning electron microscopy (SEM), cathodoluminescence (CL) spectroscopy, and CL mapping. We found that the KOH treatment selectively forms a-plane-dominated sidewalls on the high-Al-content portion of the microrods, whereas the etch pit bottoms stabilize as m-plane facets. Notably, the CL spectra show that the band-edge emission intensity of the 2 μm microrods is enhanced by a factor of 3.76 compared to the 4 μm structures. CL mapping further unveils the competitive dynamics between radiative recombination within the quantum wells and non-radiative recombination at surface states. These findings pinpoint 2 μm as the optimal diameter among the investigated range for maximizing spontaneous emission from these high-Al-content AlGaN microrods. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.3390/nano16060355
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        Text: English
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        PageCount: 13
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      – SubjectFull: Cathodoluminescence
        Type: general
      – SubjectFull: Quantum wells
        Type: general
      – SubjectFull: Ultraviolet radiation
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      – SubjectFull: Semiconductor materials
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      – SubjectFull: Plasma etching
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      – SubjectFull: Radiative transitions
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      – SubjectFull: Etching reagents
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              Text: Mar2026
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