Vibrational Characteristics of High-Quality MBE Grown GaAs 1−x−y Sb y N x /GaAs (001) Epilayers.
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| Title: | Vibrational Characteristics of High-Quality MBE Grown GaAs 1−x−y Sb y N x /GaAs (001) Epilayers. |
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| Authors: | Talwar, Devki N.1,2 (AUTHOR) devki.talwar@unf.edu, Lin, Hao-Hsiung2,3 (AUTHOR) |
| Source: | Materials (1996-1944). Mar2026, Vol. 19 Issue 5, p923. 20p. |
| Subjects: | Raman spectroscopy, Molecular beam epitaxy, Optoelectronic devices, Phonon-phonon interactions, Gallium arsenide semiconductors, Band gaps, Vibrational spectra |
| Abstract: | The significant disparity between the size and electronegativity of N and group-V (P, As, Sb) atoms in dilute III–V-Ns remains a cornerstone for developing the next-generation electronics. Variations in the structural, optical, and phonon properties of the quaternary GaAs1−x−ySbyNx alloys are being used for improving the high-performance photovoltaic energy and optoelectronic technologies. Bandgap E g tunability has assisted efficient light emission/detection to cover the crucial optical fiber wavelengths for the low-cost integrated chips in data communications and sensing devices. The lattice dynamical properties of these materials are critical for assessing the reliability to evaluate the performance of long-wavelength lasers, photodetectors, and multi-junction solar cells. Our systematic Raman measurements on high-quality MBE grown G a A s 0.946 S b 0.032 N 0.022 /GaAs samples have detected ω T O (Γ) G a A s and ω T O (Γ) G a A s phonons along with a high frequency NAs local mode near ~476 cm−1. Weak phonon structures on both sides of the broad 476 cm−1 band are interpreted forming a complex NAs–Ga–SbAs defect center. Using a realistic rigid-ion model in the Green's function framework, the simulations of impurity modes for isolated and complex defects have provided corroboration to the experimental data. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | The significant disparity between the size and electronegativity of N and group-V (P, As, Sb) atoms in dilute III–V-Ns remains a cornerstone for developing the next-generation electronics. Variations in the structural, optical, and phonon properties of the quaternary GaAs1−x−ySbyNx alloys are being used for improving the high-performance photovoltaic energy and optoelectronic technologies. Bandgap E g tunability has assisted efficient light emission/detection to cover the crucial optical fiber wavelengths for the low-cost integrated chips in data communications and sensing devices. The lattice dynamical properties of these materials are critical for assessing the reliability to evaluate the performance of long-wavelength lasers, photodetectors, and multi-junction solar cells. Our systematic Raman measurements on high-quality MBE grown G a A s 0.946 S b 0.032 N 0.022 /GaAs samples have detected ω T O (Γ) G a A s and ω T O (Γ) G a A s phonons along with a high frequency NAs local mode near ~476 cm−1. Weak phonon structures on both sides of the broad 476 cm−1 band are interpreted forming a complex NAs–Ga–SbAs defect center. Using a realistic rigid-ion model in the Green's function framework, the simulations of impurity modes for isolated and complex defects have provided corroboration to the experimental data. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 19961944 |
| DOI: | 10.3390/ma19050923 |
