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Classical-to-quantum crossover in 2D TMD field-effect transistors: A first-principles study via sub-10 nm channel scaling beyond Boltzmann tyranny.

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Title: Classical-to-quantum crossover in 2D TMD field-effect transistors: A first-principles study via sub-10 nm channel scaling beyond Boltzmann tyranny.
Authors: Chen, Yu-Chang1,2 (AUTHOR) yuchangchen@nycu.edu.tw, Ling, Chia-Yang1 (AUTHOR), Lin, Ken-Ming1 (AUTHOR)
Source: Applied Physics Reviews. Mar2026, Vol. 13 Issue 1, p1-14. 14p.
Subjects: Quantum tunneling, Thermionic emission, Field-effect transistors
Abstract: Scaling field-effect transistors (FETs) into the sub-10-nm regime fundamentally alters the transport mechanism, challenging long-standing design rules. This study investigates monolayer Pt–WSe2–Pt FETs with channel lengths from 12 to 3 nm, quantifying the competition between semiclassical thermionic current and quantum tunneling. We show that quantum transport, as described by the Landauer formula, asymptotically approaches classical thermionic emission in the long-channel and high-temperature limit, in accordance with Richardson's law. In the high-temperature thermionic regime, the slope of log 10 (J / T) reflects the effective work function. A competition parameter ζ cleanly delineates the semiclassical-to-quantum transition, and two characteristic temperatures emerge: T op (minimizing J OFF ), and T c (thermionic onset). For L ch < 9 nm, T op < 300 K, and J OFF is tunneling-dominated; the 3 nm device remains tunneling-dominated up to 500 K and achieves a subthreshold swing overcoming the Boltzmann tyranny (BT) via the steep slope of τ (E). However, the short-channel effect also generates leakage current and makes the transistor difficult to turn off. For L ch ≥ 9 nm, T op > 300 K, and J OFF is thermionic-dominated, and the subthreshold swing approaches (BT / α in ). Consequently, the ideal channel length for 2D FETs is L ch ≈ 10 nm. These results provide criteria for selecting the optimal operating temperature and gate-voltage windows in miniaturizing 2D FETs, and pinpoint the crossover at which quantum tunneling current becomes comparable to semiclassical thermionic emission. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
Description
Abstract:Scaling field-effect transistors (FETs) into the sub-10-nm regime fundamentally alters the transport mechanism, challenging long-standing design rules. This study investigates monolayer Pt–WSe2–Pt FETs with channel lengths from 12 to 3 nm, quantifying the competition between semiclassical thermionic current and quantum tunneling. We show that quantum transport, as described by the Landauer formula, asymptotically approaches classical thermionic emission in the long-channel and high-temperature limit, in accordance with Richardson's law. In the high-temperature thermionic regime, the slope of log 10 (J / T) reflects the effective work function. A competition parameter ζ cleanly delineates the semiclassical-to-quantum transition, and two characteristic temperatures emerge: T op (minimizing J OFF ), and T c (thermionic onset). For L ch < 9 nm, T op < 300 K, and J OFF is tunneling-dominated; the 3 nm device remains tunneling-dominated up to 500 K and achieves a subthreshold swing overcoming the Boltzmann tyranny (BT) via the steep slope of τ (E). However, the short-channel effect also generates leakage current and makes the transistor difficult to turn off. For L ch ≥ 9 nm, T op > 300 K, and J OFF is thermionic-dominated, and the subthreshold swing approaches (BT / α in ). Consequently, the ideal channel length for 2D FETs is L ch ≈ 10 nm. These results provide criteria for selecting the optimal operating temperature and gate-voltage windows in miniaturizing 2D FETs, and pinpoint the crossover at which quantum tunneling current becomes comparable to semiclassical thermionic emission. [ABSTRACT FROM AUTHOR]
ISSN:19319401
DOI:10.1063/5.0303607