Classical-to-quantum crossover in 2D TMD field-effect transistors: A first-principles study via sub-10 nm channel scaling beyond Boltzmann tyranny.
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| Title: | Classical-to-quantum crossover in 2D TMD field-effect transistors: A first-principles study via sub-10 nm channel scaling beyond Boltzmann tyranny. |
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| Authors: | Chen, Yu-Chang1,2 (AUTHOR) yuchangchen@nycu.edu.tw, Ling, Chia-Yang1 (AUTHOR), Lin, Ken-Ming1 (AUTHOR) |
| Source: | Applied Physics Reviews. Mar2026, Vol. 13 Issue 1, p1-14. 14p. |
| Subjects: | Quantum tunneling, Thermionic emission, Field-effect transistors |
| Abstract: | Scaling field-effect transistors (FETs) into the sub-10-nm regime fundamentally alters the transport mechanism, challenging long-standing design rules. This study investigates monolayer Pt–WSe2–Pt FETs with channel lengths from 12 to 3 nm, quantifying the competition between semiclassical thermionic current and quantum tunneling. We show that quantum transport, as described by the Landauer formula, asymptotically approaches classical thermionic emission in the long-channel and high-temperature limit, in accordance with Richardson's law. In the high-temperature thermionic regime, the slope of log 10 (J / T) reflects the effective work function. A competition parameter ζ cleanly delineates the semiclassical-to-quantum transition, and two characteristic temperatures emerge: T op (minimizing J OFF ), and T c (thermionic onset). For L ch < 9 nm, T op < 300 K, and J OFF is tunneling-dominated; the 3 nm device remains tunneling-dominated up to 500 K and achieves a subthreshold swing overcoming the Boltzmann tyranny (BT) via the steep slope of τ (E). However, the short-channel effect also generates leakage current and makes the transistor difficult to turn off. For L ch ≥ 9 nm, T op > 300 K, and J OFF is thermionic-dominated, and the subthreshold swing approaches (BT / α in ). Consequently, the ideal channel length for 2D FETs is L ch ≈ 10 nm. These results provide criteria for selecting the optimal operating temperature and gate-voltage windows in miniaturizing 2D FETs, and pinpoint the crossover at which quantum tunneling current becomes comparable to semiclassical thermionic emission. [ABSTRACT FROM AUTHOR] |
| Copyright of Applied Physics Reviews is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 192689686 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Classical-to-quantum crossover in 2D TMD field-effect transistors: A first-principles study via sub-10 nm channel scaling beyond Boltzmann tyranny. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Chen%2C+Yu-Chang%22">Chen, Yu-Chang</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> yuchangchen@nycu.edu.tw</i><br /><searchLink fieldCode="AR" term="%22Ling%2C+Chia-Yang%22">Ling, Chia-Yang</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Lin%2C+Ken-Ming%22">Lin, Ken-Ming</searchLink><relatesTo>1</relatesTo> (AUTHOR) – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Reviews%22">Applied Physics Reviews</searchLink>. Mar2026, Vol. 13 Issue 1, p1-14. 14p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Quantum+tunneling%22">Quantum tunneling</searchLink><br /><searchLink fieldCode="DE" term="%22Thermionic+emission%22">Thermionic emission</searchLink><br /><searchLink fieldCode="DE" term="%22Field-effect+transistors%22">Field-effect transistors</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Scaling field-effect transistors (FETs) into the sub-10-nm regime fundamentally alters the transport mechanism, challenging long-standing design rules. This study investigates monolayer Pt–WSe2–Pt FETs with channel lengths from 12 to 3 nm, quantifying the competition between semiclassical thermionic current and quantum tunneling. We show that quantum transport, as described by the Landauer formula, asymptotically approaches classical thermionic emission in the long-channel and high-temperature limit, in accordance with Richardson's law. In the high-temperature thermionic regime, the slope of log 10 (J / T) reflects the effective work function. A competition parameter ζ cleanly delineates the semiclassical-to-quantum transition, and two characteristic temperatures emerge: T op (minimizing J OFF ), and T c (thermionic onset). For L ch < 9 nm, T op < 300 K, and J OFF is tunneling-dominated; the 3 nm device remains tunneling-dominated up to 500 K and achieves a subthreshold swing overcoming the Boltzmann tyranny (BT) via the steep slope of τ (E). However, the short-channel effect also generates leakage current and makes the transistor difficult to turn off. For L ch ≥ 9 nm, T op > 300 K, and J OFF is thermionic-dominated, and the subthreshold swing approaches (BT / α in ). Consequently, the ideal channel length for 2D FETs is L ch ≈ 10 nm. These results provide criteria for selecting the optimal operating temperature and gate-voltage windows in miniaturizing 2D FETs, and pinpoint the crossover at which quantum tunneling current becomes comparable to semiclassical thermionic emission. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Applied Physics Reviews is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1063/5.0303607 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 14 StartPage: 1 Subjects: – SubjectFull: Quantum tunneling Type: general – SubjectFull: Thermionic emission Type: general – SubjectFull: Field-effect transistors Type: general Titles: – TitleFull: Classical-to-quantum crossover in 2D TMD field-effect transistors: A first-principles study via sub-10 nm channel scaling beyond Boltzmann tyranny. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Chen, Yu-Chang – PersonEntity: Name: NameFull: Ling, Chia-Yang – PersonEntity: Name: NameFull: Lin, Ken-Ming IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 03 Text: Mar2026 Type: published Y: 2026 Identifiers: – Type: issn-print Value: 19319401 Numbering: – Type: volume Value: 13 – Type: issue Value: 1 Titles: – TitleFull: Applied Physics Reviews Type: main |
| ResultId | 1 |
