Nonvolatile Reconfigurable Synthetic Antiferromagnetic Devices Induced by Spin-Orbit Torque for Multifunctional In-Memory Computing.
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| Title: | Nonvolatile Reconfigurable Synthetic Antiferromagnetic Devices Induced by Spin-Orbit Torque for Multifunctional In-Memory Computing. |
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| Authors: | Song, Mingxu1,2 (AUTHOR), Liu, Jiahao1,2 (AUTHOR), Zhu, Zhihong1,2 (AUTHOR) zhuzhihong@nudt.edu.cn |
| Source: | Nanomaterials (2079-4991). Apr2026, Vol. 16 Issue 7, p444. 12p. |
| Subjects: | Spin-orbit interactions, Nonvolatile memory, Antiferromagnetic materials, Electronic equipment, Edge computing, Hardware, Boolean expressions |
| Abstract: | The proliferation of intelligent edge devices demands compact, low-power hardware capable of dynamically switching between sensing, logic, and learning tasks—a versatility that traditional multi-chip solutions fundamentally lack. Here, we demonstrate a reconfigurable spin–orbit torque (SOT) device based on an FeTb/Ru/Co synthetic antiferromagnetic (SAF) heterostructure. By modulating the input current amplitude, the device dynamically switches between two distinct operating modes: saturation and activation. In the saturation regime (>80 mA), deterministic magnetization reversal enables Boolean logic operations (AND, NOR). In the activation regime (<80 mA), gradual, non-volatile conductance modulation emulates synaptic plasticity. Benefiting from the strong antiferromagnetic coupling and near-zero net magnetization of the SAF structure, all operations are achieved without external magnetic fields. This single-device, dual-mode reconfigurable architecture establishes a new paradigm for high-density, low-power, multifunctional in-memory computing units, with promise for advancing adaptive edge computing chips. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | The proliferation of intelligent edge devices demands compact, low-power hardware capable of dynamically switching between sensing, logic, and learning tasks—a versatility that traditional multi-chip solutions fundamentally lack. Here, we demonstrate a reconfigurable spin–orbit torque (SOT) device based on an FeTb/Ru/Co synthetic antiferromagnetic (SAF) heterostructure. By modulating the input current amplitude, the device dynamically switches between two distinct operating modes: saturation and activation. In the saturation regime (>80 mA), deterministic magnetization reversal enables Boolean logic operations (AND, NOR). In the activation regime (<80 mA), gradual, non-volatile conductance modulation emulates synaptic plasticity. Benefiting from the strong antiferromagnetic coupling and near-zero net magnetization of the SAF structure, all operations are achieved without external magnetic fields. This single-device, dual-mode reconfigurable architecture establishes a new paradigm for high-density, low-power, multifunctional in-memory computing units, with promise for advancing adaptive edge computing chips. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 20794991 |
| DOI: | 10.3390/nano16070444 |
