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Fabrication and Investigation of Switching Properties in HFSNO2–based RRAM.

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Title: Fabrication and Investigation of Switching Properties in HFSNO2–based RRAM.
Authors: Kuan, Chieh-Yu1 (AUTHOR), Chang, Sheng-Po2 (AUTHOR) changsp@nkust.edu.tw, Su, Wen-I1 (AUTHOR), Chen, Jone-Fang1 (AUTHOR), Chang, Shoou-Jinn1 (AUTHOR)
Source: NANO (1793-2920). Jul2026, Vol. 21 Issue 9, p1-14. 14p.
Subjects: Hafnium compounds, Nonvolatile random-access memory, Electric properties, Multilayers, Sputter deposition
Abstract: This study investigated the switching characteristics of HfSnO2 as the insulating layer in Resistive Random Access Memory (RRAM) compared with those of Conductive–Bridge Random Access Memory (CBRAM) (Ag/HfSnO2/Pt) and Oxide–based Random Access Memory (OxRAM) (Al/HfSnO2/Pt). CBRAM exhibited superior performance in terms of (set Voltage) Vset, resistance uniformity and endurance. Increasing the HfSnO2 thickness increased Vset but decreased endurance; a 40 nm layer achieved a Vset of 0.4 V with over 1000 cycles, whereas a 20 nm layer reduced Vset to 0.35 V but endured only 306 cycles. Setting the sputtering pressure to 5 mTorr decreased Vset to 0.369 V with an endurance exceeding 1000 cycles, whereas increasing the O2 ratio to 30% decreased Vset to 0.33 V with similar endurance. To further enhance performance, we used a two–layer HfSnO2 structure, achieving a Vset of 0.259 V with an endurance surpassing 1000 cycles. This study demonstrated that optimizing the HfSnO2 thickness, sputtering conditions and multilayer structures significantly improves HfSnO2–based RRAM performance. This study explores how hafnium tin oxide thickness, sputtering pressure, and oxygen ratio affect RRAM performance. To further enhance switching behavior, a two–layer hafnium tin oxide structure was developed by tuning the above parameters and analyzing the resulting thickness, oxygen vacancy distribution, and Ag ion diffusion characteristics. This multilayer approach effectively reduced Vset and improved endurance. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
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Abstract:This study investigated the switching characteristics of HfSnO2 as the insulating layer in Resistive Random Access Memory (RRAM) compared with those of Conductive–Bridge Random Access Memory (CBRAM) (Ag/HfSnO2/Pt) and Oxide–based Random Access Memory (OxRAM) (Al/HfSnO2/Pt). CBRAM exhibited superior performance in terms of (set Voltage) Vset, resistance uniformity and endurance. Increasing the HfSnO2 thickness increased Vset but decreased endurance; a 40 nm layer achieved a Vset of 0.4 V with over 1000 cycles, whereas a 20 nm layer reduced Vset to 0.35 V but endured only 306 cycles. Setting the sputtering pressure to 5 mTorr decreased Vset to 0.369 V with an endurance exceeding 1000 cycles, whereas increasing the O2 ratio to 30% decreased Vset to 0.33 V with similar endurance. To further enhance performance, we used a two–layer HfSnO2 structure, achieving a Vset of 0.259 V with an endurance surpassing 1000 cycles. This study demonstrated that optimizing the HfSnO2 thickness, sputtering conditions and multilayer structures significantly improves HfSnO2–based RRAM performance. This study explores how hafnium tin oxide thickness, sputtering pressure, and oxygen ratio affect RRAM performance. To further enhance switching behavior, a two–layer hafnium tin oxide structure was developed by tuning the above parameters and analyzing the resulting thickness, oxygen vacancy distribution, and Ag ion diffusion characteristics. This multilayer approach effectively reduced Vset and improved endurance. [ABSTRACT FROM AUTHOR]
ISSN:17932920
DOI:10.1142/S179329202550119X