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Infrared detectors based on LSPR-enhanced floating-gate AlGaN/GaN HEMT structures.

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Bibliographic Details
Title:	Infrared detectors based on LSPR-enhanced floating-gate AlGaN/GaN HEMT structures.
Authors:	Wu, Yangkun¹ (AUTHOR), Dong, Zhihua¹ (AUTHOR) dongzhihua@hdu.edu.cn, Deng, Tiansong¹ (AUTHOR), Lin, Jiamu¹ (AUTHOR), Chen, Zelin¹ (AUTHOR), li, Xu¹ (AUTHOR), Sun, Yu¹ (AUTHOR), Li, Cheng¹ (AUTHOR)
Source:	Micro & Nanostructures. Jun2026, Vol. 214, pN.PAG-N.PAG. 1p.
Subjects:	Infrared detectors, Surface plasmon resonance, Semiconductor devices, Modulation-doped field-effect transistors, Computer simulation, Transistors, Hot carriers
Abstract:	We propose a novel infrared detector architecture that, integrates localized surface plasmon resonance enhancement mechanisms into an AlGaN/GaN high electron mobility transistor platform. A suspended palladium porous nanomembrane is introduced as both the gate electrode and plasmonic layer, enabling broadband infrared absorption and efficient hot-carrier generation. In addition, we introduce a recessed-gate design combined with a p-GaN cap layer also reported here in the context of plasmon-enhanced GaN-based detectors which significantly reduces the Schottky barrier height and promotes near-ohmic contact behavior. A multiphysics simulation approach, combining the finite-difference time-domain method and Silvaco TCAD, is employed to analyze the optical absorption, carrier dynamics, and electrical characteristics of the proposed device. The results demonstrate a enhanced responsivity for GaN-based plasmonic infrared detection of 834.48 nA/W and a signal-to-noise ratio of 25.42 under 1.5 μm illumination. The findings provide a new framework for room-temperature-operable and CMOS-compatible infrared sensing devices, offering theoretical insight and numerical validation for future plasmonic detector integration. • A novel LSPR-enhanced AlGaN/GaN HEMT IR detectors with a suspended Pd porous nanomembrane gate is proposed. • Tunable nanohole arrays enable controllable LSPR and efficient near-infrared absorption. • Coupled FDTD–TCAD simulations quantify hot-electron injection and photoelectric conversion. • A recessed gate with p-GaN cap forms p-type Schottky contact and improves responsivity. • At room temperature, the optimized device achieved a responsivity of 834.48 nA/W at 1.5 μm with a SNR of 25.42. [ABSTRACT FROM AUTHOR]
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Database:	Engineering Source

Description
Abstract:	We propose a novel infrared detector architecture that, integrates localized surface plasmon resonance enhancement mechanisms into an AlGaN/GaN high electron mobility transistor platform. A suspended palladium porous nanomembrane is introduced as both the gate electrode and plasmonic layer, enabling broadband infrared absorption and efficient hot-carrier generation. In addition, we introduce a recessed-gate design combined with a p-GaN cap layer also reported here in the context of plasmon-enhanced GaN-based detectors which significantly reduces the Schottky barrier height and promotes near-ohmic contact behavior. A multiphysics simulation approach, combining the finite-difference time-domain method and Silvaco TCAD, is employed to analyze the optical absorption, carrier dynamics, and electrical characteristics of the proposed device. The results demonstrate a enhanced responsivity for GaN-based plasmonic infrared detection of 834.48 nA/W and a signal-to-noise ratio of 25.42 under 1.5 μm illumination. The findings provide a new framework for room-temperature-operable and CMOS-compatible infrared sensing devices, offering theoretical insight and numerical validation for future plasmonic detector integration. • A novel LSPR-enhanced AlGaN/GaN HEMT IR detectors with a suspended Pd porous nanomembrane gate is proposed. • Tunable nanohole arrays enable controllable LSPR and efficient near-infrared absorption. • Coupled FDTD–TCAD simulations quantify hot-electron injection and photoelectric conversion. • A recessed gate with p-GaN cap forms p-type Schottky contact and improves responsivity. • At room temperature, the optimized device achieved a responsivity of 834.48 nA/W at 1.5 μm with a SNR of 25.42. [ABSTRACT FROM AUTHOR]
ISSN:	27730131
DOI:	10.1016/j.micrna.2026.208626