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Infrared detectors based on LSPR-enhanced floating-gate AlGaN/GaN HEMT structures.

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Title: Infrared detectors based on LSPR-enhanced floating-gate AlGaN/GaN HEMT structures.
Authors: Wu, Yangkun1 (AUTHOR), Dong, Zhihua1 (AUTHOR) dongzhihua@hdu.edu.cn, Deng, Tiansong1 (AUTHOR), Lin, Jiamu1 (AUTHOR), Chen, Zelin1 (AUTHOR), li, Xu1 (AUTHOR), Sun, Yu1 (AUTHOR), Li, Cheng1 (AUTHOR)
Source: Micro & Nanostructures. Jun2026, Vol. 214, pN.PAG-N.PAG. 1p.
Subjects: Infrared detectors, Surface plasmon resonance, Semiconductor devices, Modulation-doped field-effect transistors, Computer simulation, Transistors, Hot carriers
Abstract: We propose a novel infrared detector architecture that, integrates localized surface plasmon resonance enhancement mechanisms into an AlGaN/GaN high electron mobility transistor platform. A suspended palladium porous nanomembrane is introduced as both the gate electrode and plasmonic layer, enabling broadband infrared absorption and efficient hot-carrier generation. In addition, we introduce a recessed-gate design combined with a p-GaN cap layer also reported here in the context of plasmon-enhanced GaN-based detectors which significantly reduces the Schottky barrier height and promotes near-ohmic contact behavior. A multiphysics simulation approach, combining the finite-difference time-domain method and Silvaco TCAD, is employed to analyze the optical absorption, carrier dynamics, and electrical characteristics of the proposed device. The results demonstrate a enhanced responsivity for GaN-based plasmonic infrared detection of 834.48 nA/W and a signal-to-noise ratio of 25.42 under 1.5 μm illumination. The findings provide a new framework for room-temperature-operable and CMOS-compatible infrared sensing devices, offering theoretical insight and numerical validation for future plasmonic detector integration. • A novel LSPR-enhanced AlGaN/GaN HEMT IR detectors with a suspended Pd porous nanomembrane gate is proposed. • Tunable nanohole arrays enable controllable LSPR and efficient near-infrared absorption. • Coupled FDTD–TCAD simulations quantify hot-electron injection and photoelectric conversion. • A recessed gate with p-GaN cap forms p-type Schottky contact and improves responsivity. • At room temperature, the optimized device achieved a responsivity of 834.48 nA/W at 1.5 μm with a SNR of 25.42. [ABSTRACT FROM AUTHOR]
Copyright of Micro & Nanostructures is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 193094379
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Label: Title
  Group: Ti
  Data: Infrared detectors based on LSPR-enhanced floating-gate AlGaN/GaN HEMT structures.
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  Data: <searchLink fieldCode="AR" term="%22Wu%2C+Yangkun%22">Wu, Yangkun</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Dong%2C+Zhihua%22">Dong, Zhihua</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> dongzhihua@hdu.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Deng%2C+Tiansong%22">Deng, Tiansong</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Lin%2C+Jiamu%22">Lin, Jiamu</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chen%2C+Zelin%22">Chen, Zelin</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22li%2C+Xu%22">li, Xu</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Sun%2C+Yu%22">Sun, Yu</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Li%2C+Cheng%22">Li, Cheng</searchLink><relatesTo>1</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Micro+%26+Nanostructures%22">Micro & Nanostructures</searchLink>. Jun2026, Vol. 214, pN.PAG-N.PAG. 1p.
– Name: Subject
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  Data: <searchLink fieldCode="DE" term="%22Infrared+detectors%22">Infrared detectors</searchLink><br /><searchLink fieldCode="DE" term="%22Surface+plasmon+resonance%22">Surface plasmon resonance</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+devices%22">Semiconductor devices</searchLink><br /><searchLink fieldCode="DE" term="%22Modulation-doped+field-effect+transistors%22">Modulation-doped field-effect transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Computer+simulation%22">Computer simulation</searchLink><br /><searchLink fieldCode="DE" term="%22Transistors%22">Transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Hot+carriers%22">Hot carriers</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: We propose a novel infrared detector architecture that, integrates localized surface plasmon resonance enhancement mechanisms into an AlGaN/GaN high electron mobility transistor platform. A suspended palladium porous nanomembrane is introduced as both the gate electrode and plasmonic layer, enabling broadband infrared absorption and efficient hot-carrier generation. In addition, we introduce a recessed-gate design combined with a p-GaN cap layer also reported here in the context of plasmon-enhanced GaN-based detectors which significantly reduces the Schottky barrier height and promotes near-ohmic contact behavior. A multiphysics simulation approach, combining the finite-difference time-domain method and Silvaco TCAD, is employed to analyze the optical absorption, carrier dynamics, and electrical characteristics of the proposed device. The results demonstrate a enhanced responsivity for GaN-based plasmonic infrared detection of 834.48 nA/W and a signal-to-noise ratio of 25.42 under 1.5 μm illumination. The findings provide a new framework for room-temperature-operable and CMOS-compatible infrared sensing devices, offering theoretical insight and numerical validation for future plasmonic detector integration. • A novel LSPR-enhanced AlGaN/GaN HEMT IR detectors with a suspended Pd porous nanomembrane gate is proposed. • Tunable nanohole arrays enable controllable LSPR and efficient near-infrared absorption. • Coupled FDTD–TCAD simulations quantify hot-electron injection and photoelectric conversion. • A recessed gate with p-GaN cap forms p-type Schottky contact and improves responsivity. • At room temperature, the optimized device achieved a responsivity of 834.48 nA/W at 1.5 μm with a SNR of 25.42. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Micro & Nanostructures is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1016/j.micrna.2026.208626
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 1
        StartPage: N.PAG
    Subjects:
      – SubjectFull: Infrared detectors
        Type: general
      – SubjectFull: Surface plasmon resonance
        Type: general
      – SubjectFull: Semiconductor devices
        Type: general
      – SubjectFull: Modulation-doped field-effect transistors
        Type: general
      – SubjectFull: Computer simulation
        Type: general
      – SubjectFull: Transistors
        Type: general
      – SubjectFull: Hot carriers
        Type: general
    Titles:
      – TitleFull: Infrared detectors based on LSPR-enhanced floating-gate AlGaN/GaN HEMT structures.
        Type: main
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          Name:
            NameFull: Wu, Yangkun
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            NameFull: Dong, Zhihua
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            NameFull: Deng, Tiansong
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            NameFull: Lin, Jiamu
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            NameFull: Chen, Zelin
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            NameFull: li, Xu
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            NameFull: Sun, Yu
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            NameFull: Li, Cheng
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          Dates:
            – D: 01
              M: 06
              Text: Jun2026
              Type: published
              Y: 2026
          Identifiers:
            – Type: issn-print
              Value: 27730131
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              Value: 214
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            – TitleFull: Micro & Nanostructures
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