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Relativistic quantum mechanical calculations of Stark broadening of Si III and Si IV spectral lines.

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Title: Relativistic quantum mechanical calculations of Stark broadening of Si III and Si IV spectral lines.
Authors: Wu, Chao1 (AUTHOR) wuchao_0728@163.com, Gao, Xiang1,2 (AUTHOR) gao_xiang@iapcm.ac.cn, Wu, Yong2,3 (AUTHOR) wu_yong@iapcm.ac.cn, Li, Ming1 (AUTHOR) limingnuaa@hotmail.com, Xie, You1 (AUTHOR) xieyou@hotmail.com, Wang, Jian Guo2 (AUTHOR) wang_jianguo@iapcm.ac.cn
Source: Advances in Space Research. May2026, Vol. 77 Issue 10, p10831-10840. 10p.
Subjects: Stark effect, Spectral lines, Relativistic quantum mechanics, Electron-ion collisions, Plasma diagnostics, Astrophysics
Abstract: Previous investigations on the Stark broadening of Si III and Si IV ions have revealed systematic discrepancies between experimental data and theoretical results. The present work thus aims to accurately calculate and evaluate the Stark broadening data for Si III and Si IV spectral lines using a relativistic quantum mechanical method based on impact approximation theory (ion collision effects neglected). Specifically, the relativistic close-coupling R-matrix method was employed to compute electron–ion collision processes, with the convergence of the line width results rigorously verified throughout the calculations to ensure data reliability. Comparisons between our quantum mechanical calculations, results from other theoretical methods, and experimental data demonstrate that the consistency between our theoretical results and experimental measurements is significantly improved, particularly for Si IV spectral lines. Additionally, we adopted an improved fitting formula to precisely characterize the temperature dependence of Stark broadening for 108 Si III and Si IV lines. These computed line widths and fitting parameters provide valuable support for applications in astrophysics and plasma diagnostics. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
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Abstract:Previous investigations on the Stark broadening of Si III and Si IV ions have revealed systematic discrepancies between experimental data and theoretical results. The present work thus aims to accurately calculate and evaluate the Stark broadening data for Si III and Si IV spectral lines using a relativistic quantum mechanical method based on impact approximation theory (ion collision effects neglected). Specifically, the relativistic close-coupling R-matrix method was employed to compute electron–ion collision processes, with the convergence of the line width results rigorously verified throughout the calculations to ensure data reliability. Comparisons between our quantum mechanical calculations, results from other theoretical methods, and experimental data demonstrate that the consistency between our theoretical results and experimental measurements is significantly improved, particularly for Si IV spectral lines. Additionally, we adopted an improved fitting formula to precisely characterize the temperature dependence of Stark broadening for 108 Si III and Si IV lines. These computed line widths and fitting parameters provide valuable support for applications in astrophysics and plasma diagnostics. [ABSTRACT FROM AUTHOR]
ISSN:02731177
DOI:10.1016/j.asr.2026.02.054