Bibliographic Details
| Title: |
An electron-multiplying ‘Micromegas’ grid made in silicon wafer post-processing technology |
| Authors: |
Chefdeville, M.1, Colas, P.2, Giomataris, Y.2, van der Graaf, H.1, Heijne, E.H.M.3, van der Putten, S.1, Salm, C.4, Schmitz, J.4, Smits, S.4, Timmermans, J.1 timmermans@nikhef.nl, Visschers, J.L.1 |
| Source: |
Nuclear Instruments & Methods in Physics Research Section A. Jan2006, Vol. 556 Issue 2, p490-494. 5p. |
| Subjects: |
Semiconductor wafers, Microelectronics, Electron gas, Aluminum |
| Abstract: |
Abstract: A technology for manufacturing an aluminium grid onto a silicon wafer has been developed. The grid is fixed parallel and precisely to the wafer (anode) surface at a distance of by means of insulating pillars. When some 400V are applied between the grid and (anode) wafer, gas multiplication occurs: primary electrons from the drift space above the grid enter the holes and cause electron avalanches in the high-field region between the grid and the anode. Production and operational characteristics of the device are described. With this newly developed technology, CMOS (pixel) readout chips can be covered with a gas multiplication grid. Such a chip forms, together with the grid, an integrated device which can be applied as readout in a wide field of gaseous detectors. [Copyright &y& Elsevier] |
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| Database: |
Engineering Source |
