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An electron-multiplying ‘Micromegas’ grid made in silicon wafer post-processing technology

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Title: An electron-multiplying ‘Micromegas’ grid made in silicon wafer post-processing technology
Authors: Chefdeville, M.1, Colas, P.2, Giomataris, Y.2, van der Graaf, H.1, Heijne, E.H.M.3, van der Putten, S.1, Salm, C.4, Schmitz, J.4, Smits, S.4, Timmermans, J.1 timmermans@nikhef.nl, Visschers, J.L.1
Source: Nuclear Instruments & Methods in Physics Research Section A. Jan2006, Vol. 556 Issue 2, p490-494. 5p.
Subjects: Semiconductor wafers, Microelectronics, Electron gas, Aluminum
Abstract: Abstract: A technology for manufacturing an aluminium grid onto a silicon wafer has been developed. The grid is fixed parallel and precisely to the wafer (anode) surface at a distance of by means of insulating pillars. When some 400V are applied between the grid and (anode) wafer, gas multiplication occurs: primary electrons from the drift space above the grid enter the holes and cause electron avalanches in the high-field region between the grid and the anode. Production and operational characteristics of the device are described. With this newly developed technology, CMOS (pixel) readout chips can be covered with a gas multiplication grid. Such a chip forms, together with the grid, an integrated device which can be applied as readout in a wide field of gaseous detectors. [Copyright &y& Elsevier]
Copyright of Nuclear Instruments & Methods in Physics Research Section A is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 19338258
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: An electron-multiplying ‘Micromegas’ grid made in silicon wafer post-processing technology
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  Data: <searchLink fieldCode="AR" term="%22Chefdeville%2C+M%2E%22">Chefdeville, M.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Colas%2C+P%2E%22">Colas, P.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Giomataris%2C+Y%2E%22">Giomataris, Y.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22van+der+Graaf%2C+H%2E%22">van der Graaf, H.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Heijne%2C+E%2EH%2EM%2E%22">Heijne, E.H.M.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22van+der+Putten%2C+S%2E%22">van der Putten, S.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Salm%2C+C%2E%22">Salm, C.</searchLink><relatesTo>4</relatesTo><br /><searchLink fieldCode="AR" term="%22Schmitz%2C+J%2E%22">Schmitz, J.</searchLink><relatesTo>4</relatesTo><br /><searchLink fieldCode="AR" term="%22Smits%2C+S%2E%22">Smits, S.</searchLink><relatesTo>4</relatesTo><br /><searchLink fieldCode="AR" term="%22Timmermans%2C+J%2E%22">Timmermans, J.</searchLink><relatesTo>1</relatesTo><i> timmermans@nikhef.nl</i><br /><searchLink fieldCode="AR" term="%22Visschers%2C+J%2EL%2E%22">Visschers, J.L.</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Nuclear+Instruments+%26+Methods+in+Physics+Research+Section+A%22">Nuclear Instruments & Methods in Physics Research Section A</searchLink>. Jan2006, Vol. 556 Issue 2, p490-494. 5p.
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  Data: Abstract: A technology for manufacturing an aluminium grid onto a silicon wafer has been developed. The grid is fixed parallel and precisely to the wafer (anode) surface at a distance of by means of insulating pillars. When some 400V are applied between the grid and (anode) wafer, gas multiplication occurs: primary electrons from the drift space above the grid enter the holes and cause electron avalanches in the high-field region between the grid and the anode. Production and operational characteristics of the device are described. With this newly developed technology, CMOS (pixel) readout chips can be covered with a gas multiplication grid. Such a chip forms, together with the grid, an integrated device which can be applied as readout in a wide field of gaseous detectors. [Copyright &y& Elsevier]
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  Data: <i>Copyright of Nuclear Instruments & Methods in Physics Research Section A is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – SubjectFull: Electron gas
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