View in EDS

Electro-thermal analysis of device geometry dependence on the amorphous cap size in phase change memory devices.

Saved in:
Bibliographic Details
Title: Electro-thermal analysis of device geometry dependence on the amorphous cap size in phase change memory devices.
Authors: Mishra, Amiya Kumar1 (AUTHOR), Pandey, Shivendra Kumar1 (AUTHOR) skpandey@ei.nits.ac.in
Source: Semiconductor Science & Technology. 2026, Vol. 41 Issue 5, p1-9. 9p.
Subjects: Phase change memory, Phase change materials, Thermoelectric effects, Thermoelectricity, Finite element method
Abstract: We present the footprint of amorphous cap thickness (A T) to facilitate intermediate resistance inside the Phase change memory (PCM) devices with varying geometric parameters, employing electro-thermal analysis. A 2D finite element simulation with axis symmetry is employed to analyze the electro-thermal effect on the PCM device using Ge2Sb2Te5 (GST) as a phase change material. The thermoelectric effects inside the GST are calculated using the material with temperature-dependent features. The overall device performance can be optimized through precise tuning of geometrical parameters. A substantial increase in local temperature profile for the three devices was achieved by varying the amplitude of high-resistance state pulses from 1.6 V to 2.4 V, with a pulse width of 25 ns. When the heater increases and the L GST decreases, a reduced A T of 30.8 nm is observed. Conversely, reversing these dimensions results in a substantially larger cap thickness of 64 nm. An intermediate cap thickness of 48 nm is obtained when both L heater and L GST are the same. A thicker amorphous cap leads to a lower peak temperature. Device 2 (L heater < L GST) exhibits a peak resistance of 16.45 MΩ, with Device 1 (L heater ≈ L GST) and Device 3 (L heater > L GST) showing 23.6% and 52% lower values, respectively. These findings are helpful to achieve the multi-bit operations inside the device, which is suitable to emulate the biological synapse. [ABSTRACT FROM AUTHOR]
Copyright of Semiconductor Science & Technology is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
Description
Abstract:We present the footprint of amorphous cap thickness (A T) to facilitate intermediate resistance inside the Phase change memory (PCM) devices with varying geometric parameters, employing electro-thermal analysis. A 2D finite element simulation with axis symmetry is employed to analyze the electro-thermal effect on the PCM device using Ge2Sb2Te5 (GST) as a phase change material. The thermoelectric effects inside the GST are calculated using the material with temperature-dependent features. The overall device performance can be optimized through precise tuning of geometrical parameters. A substantial increase in local temperature profile for the three devices was achieved by varying the amplitude of high-resistance state pulses from 1.6 V to 2.4 V, with a pulse width of 25 ns. When the heater increases and the L GST decreases, a reduced A T of 30.8 nm is observed. Conversely, reversing these dimensions results in a substantially larger cap thickness of 64 nm. An intermediate cap thickness of 48 nm is obtained when both L heater and L GST are the same. A thicker amorphous cap leads to a lower peak temperature. Device 2 (L heater < L GST) exhibits a peak resistance of 16.45 MΩ, with Device 1 (L heater ≈ L GST) and Device 3 (L heater > L GST) showing 23.6% and 52% lower values, respectively. These findings are helpful to achieve the multi-bit operations inside the device, which is suitable to emulate the biological synapse. [ABSTRACT FROM AUTHOR]
ISSN:02681242
DOI:10.1088/1361-6641/ae57d1