Growth of aligned molybdenum disulfide on sapphire via atmospheric-pressure chemical vapor deposition.
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| Title: | Growth of aligned molybdenum disulfide on sapphire via atmospheric-pressure chemical vapor deposition. |
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| Authors: | Li, Jiangbin1 (AUTHOR), Li, Zebin1 (AUTHOR) lizebinn@163.com, Li, Lianbi1 (AUTHOR) xpu_lilianbi@163.com |
| Source: | Materials Letters. Aug2026, Vol. 417, pN.PAG-N.PAG. 1p. |
| Subjects: | Molybdenum disulfide, Chemical vapor deposition, Photoelectric devices, Thin films, Crystal grain boundaries, Substrates (Materials science), Semiconductor thin films, Electric conductivity |
| Abstract: | Molybdenum disulfide (MoS 2), a two-dimensional semiconductor, is considered an ideal channel material for post-Moore era transistors due to its atomic thickness, high carrier mobility, and superior gate control ability. In this study, aligned monolayer MoS 2 was synthesized on a sapphire substrate using atmospheric-pressure chemical vapor deposition (APCVD). The aligned orientation of MoS 2 was confirmed using optical microscopy. Spectroscopic and structural analyses showed that the as-grown MoS 2 was a monolayer with high crystalline quality. Planar metal-semiconductor-metal (MSM) devices fabricated from this material displayed good photoresponse ability. • Growth of Aligned MoS 2 via Atmospheric-Pressure Chemical Vapor Deposition. • Parallel-oriented MoS 2 exhibits more uniform quality compared to antiparallel-oriented MoS 2. • Electrical measurements indicate the presence of grain boundaries. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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