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Engineering optoelectronic properties in gallium oxide/gallium nitride heterostructures via post-rapid thermal annealing temperature modulation.

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Title: Engineering optoelectronic properties in gallium oxide/gallium nitride heterostructures via post-rapid thermal annealing temperature modulation.
Authors: Muhammad, A.1,2 (AUTHOR), Ng, S.S.1 (AUTHOR) shashiong@usm.my, Quah, H.J.1 (AUTHOR), Hamzah, N.A.1 (AUTHOR), Abutawahina, Momin S.M.1 (AUTHOR)
Source: Ceramics International. May2026:Part A, Vol. 52 Issue 13, p20956-20973. 18p.
Subjects: Heterostructures, Rapid thermal processing, Electron beams, Optoelectronics, Gallium nitride, Thin films, Gallium
Abstract: The study investigates the influence of post-rapid thermal annealing (PRTA) on the morphological, structural, and optoelectronic properties of β-Ga 2 O 3 /GaN heterostructures. β-Ga 2 O 3 films were deposited on GaN/sapphire substrates by electron beam evaporation and annealed at temperatures ranging from 700 to 900 °C. Atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM) analyses indicate that annealing at 800 °C yielded the smoothest surface. X-ray diffraction (XRD) results corroborate this observation, demonstrating enhanced crystallinity, as evidenced by the lowest full width at half maximum (FWHM), strain, and dislocation density at this temperature. Furthermore, optical analysis reveals improvements in absorption, refractive index, and mobility at 800 °C, accompanied by decreased resistivity and sheet resistance. These findings underscore that a controlled PRTA significantly enhances the quality of β-Ga 2 O 3 /GaN films, positioning them as promising candidates for advanced optoelectronic device applications. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
Description
Abstract:The study investigates the influence of post-rapid thermal annealing (PRTA) on the morphological, structural, and optoelectronic properties of β-Ga 2 O 3 /GaN heterostructures. β-Ga 2 O 3 films were deposited on GaN/sapphire substrates by electron beam evaporation and annealed at temperatures ranging from 700 to 900 °C. Atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM) analyses indicate that annealing at 800 °C yielded the smoothest surface. X-ray diffraction (XRD) results corroborate this observation, demonstrating enhanced crystallinity, as evidenced by the lowest full width at half maximum (FWHM), strain, and dislocation density at this temperature. Furthermore, optical analysis reveals improvements in absorption, refractive index, and mobility at 800 °C, accompanied by decreased resistivity and sheet resistance. These findings underscore that a controlled PRTA significantly enhances the quality of β-Ga 2 O 3 /GaN films, positioning them as promising candidates for advanced optoelectronic device applications. [ABSTRACT FROM AUTHOR]
ISSN:02728842
DOI:10.1016/j.ceramint.2026.03.180